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Ultrathin MoS2-coated Ag@Si nanosphere arrays as an efficient and stable photocathode for solar-driven hydrogen production

机译:超薄MOS2涂层AG @ Si纳米圈阵列作为太阳能驱动的氢气生产的高效稳定的光阴极

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摘要

Solar-driven photoelectrochemical (PEC) water splitting has attracted a great deal of attention recently. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathodes for the hydrogen evolution reaction (HER) have remained key challenges. Alternatively, MoS2 has been reported to exhibit excellent catalysis performance if sufficient active sites for the HER are available. Here, ultrathin MoS2 nanoflakes are directly synthesized to coat arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) by using chemical vapor deposition. Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. In addition, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. An photocurrent density of 33.3 mA cm(-2) at a voltage of -0.4 V is obtained versus the reversible hydrogen electrode. The as-prepared nanostructure as a hydrogen photocathode is evidenced to have high stability over 12 h PEC performance. This work opens up opportunities for composite photocathodes with high activity and stability using cheap and stable co-catalysts.
机译:太阳能驱动的光电化学(PEC)水分裂最近引起了大量的关注。硅(Si)是太阳能转换的理想吸烟者。然而,用于氢进化反应(她)的Si光电病变的稳定性和低效表面催化仍然存在关键挑战。或者,如果有足够的活性位点可用,则据报道,MOS2已经表现出优异的催化性能。这里,通过使用化学气相沉积,直接合成超薄MOS2纳米薄片以涂覆Ag核Si-壳纳米球(Ag @ Si NSS)的阵列。由于高表面积比和这些NSS的大曲率,所生长的MOS2纳米薄片可以容纳更多的活性位点。此外,AG @ Si NSS上的MOS2纳米薄片的高质量涂层可在PEC反应期间保护光电阴极免受损伤。获得-0.4V电压的33.3mA cm(-2)的光电流密度与可逆氢电极相比。作为氢气电量的AS制备的纳米结构被证明在12小时内具有高稳定性。这项工作为使用廉价且稳定的助催化剂具有高活性和稳定性的复合光致光阴离子的机会。

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  • 来源
    《Nanotechnology》 |2018年第10期|共9页
  • 作者单位

    Nanjing Univ Lab Solid State Microstruct Nanjing 210093 Jiangsu Peoples R China;

    South China Acad Adv Optoelect Inst Adv Mat Guangzhou 510006 Guangdong Peoples R China;

    South China Acad Adv Optoelect Inst Adv Mat Guangzhou 510006 Guangdong Peoples R China;

    Nanjing Univ Lab Solid State Microstruct Nanjing 210093 Jiangsu Peoples R China;

    Nanjing Univ Lab Solid State Microstruct Nanjing 210093 Jiangsu Peoples R China;

    South China Acad Adv Optoelect Inst Adv Mat Guangzhou 510006 Guangdong Peoples R China;

    South China Acad Adv Optoelect Inst Adv Mat Guangzhou 510006 Guangdong Peoples R China;

    Nanjing Univ Lab Solid State Microstruct Nanjing 210093 Jiangsu Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    photocathode; Ag@Si nanosphere; MoS2 catalyst; photoelectrochemical;

    机译:光电阴极;AG @ Si纳米圈;MOS2催化剂;光电化学;

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