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Sensitive SERS detection at the single-particle level based on nanometer-separated mushroom-shaped plasmonic dimers

机译：基于纳米分离的蘑菇形等离子体二聚体的单粒子水平敏感SERs检测

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摘要

Elevated metallic nanostructures with nanogaps (10 nm) possess advantages for surface enhanced Raman scattering (SERS) via the synergic effects of nanogaps and efficient decoupling from the substrate through an elevated three-dimensional (3D) design. In this work, we demonstrate a pattern-transfer-free process to reliably define elevated nanometer-separated mushroom-shaped dimers directly from 3D resist patterns based on the gap-narrowing effect during the metallic film deposition. By controlling the initial size of nanogaps in resist structures and the following deposited film thickness, metallic nanogaps could be tuned at the sub-10 nm scale with single-digit nanometer precision. Both experimental and simulated results revealed that gold dimer on mushroom-shaped pillars have the capability to achieve higher SERS enhancement factor comparing to those plasmonic dimers on cylindrical pillars or on a common SiO2/Si substrate, implying that the nanometer-gapped elevated dimer is an ideal platform to achieve the highest possible field enhancement for various plasmonic applications.
机译：升高的金属纳米结构具有Nanogaps（＆LT; 10nm），具有通过Nanogaps的协同效应和通过升高的三维（3D）设计来实现从基板的协同效应来实现表面增强的拉曼散射（SERS）的优点。在这项工作中，我们证明了一种图案转移过程，可根据金属膜沉积期间的间隙变窄效果可靠地从3D抗蚀剂图案可靠地定义升高的纳米分离的蘑菇形二聚体。通过控制抗蚀剂结构中的纳米片的初始尺寸和下列沉积的膜厚度，可以以单位数纳米精度在亚10 nm刻度上调谐金属纳米重奏。实验和模拟结果均显示蘑菇形柱上的金二聚体具有与圆柱形柱上的那些等离子体二聚体或普通的SiO2 / Si衬底上的较高的SERs增强因子相比，这意味着纳米覆盖的升高的二聚体是一种理想的平台，实现各种等离子体应用的最高可能现场增强。

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  • 来源
    《Nanotechnology》 |2018年第10期|共7页
  • 作者

    Xiang Quan; Li Zhiqin; Zheng Mengjie; Liu Qing; Chen Yiqin; Yang Lan; Jiang Tian; Duan Huigao;

  • 作者单位

    Hunan Univ Sch Phys &

    Elect State Key Lab Adv Design &

    Mfg Vehicle Body Changsha 410082 Hunan Peoples R China;

    Hunan Univ Sch Phys &

    Elect State Key Lab Adv Design &

    Mfg Vehicle Body Changsha 410082 Hunan Peoples R China;

    Hunan Univ Sch Phys &

    Elect State Key Lab Adv Design &

    Mfg Vehicle Body Changsha 410082 Hunan Peoples R China;

    Hunan Univ Sch Phys &

    Elect State Key Lab Adv Design &

    Mfg Vehicle Body Changsha 410082 Hunan Peoples R China;

    Hunan Univ Sch Phys &

    Elect State Key Lab Adv Design &

    Mfg Vehicle Body Changsha 410082 Hunan Peoples R China;

    Natl Univ Def Technol Coll Optoelect Sci &

    Engn Changsha 410073 Hunan Peoples R China;

    Natl Univ Def Technol Coll Optoelect Sci &

    Engn Changsha 410073 Hunan Peoples R China;

    Hunan Univ State Key Lab Adv Design &

    Mfg Vehicle Body Coll Mech &

    Vehicle Engn Changsha 410082 Hunan Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    electron-beam lithography; elevated metallic nanostructures; nanogaps; SERS;

    机译：电子束光刻;升高的金属纳米结构;Nanogaps;sers;

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