Ultraclean individual suspended single-walled carbon nanotube field effect transistor

Liu Siyu; Zhang Jian; Nshimiyimana Jean Pierre; Chi Xiannian; Hu Xiao; Wu Pei; Liu Jia; Wang Gongtang; Sun Lianfeng

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Ultraclean individual suspended single-walled carbon nanotube field effect transistor

机译：超薄单独悬挂的单壁碳纳米管场效应晶体管

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In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (similar to 50 k Omega), mobility of 8600 cm(2) V-1 s(-1) and large on/off ratio (similar to 10(5)) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

机译：在这项工作中，我们报告了制造超薄个体悬浮单壁碳纳米管（SWNT）晶体管的有效技术。熔融银的表面张力用于在退火处理期间悬浮在一对Pd电极之间的单独的SWNT。该方法避免了连接到SWNT的有机抗蚀剂的使用和残留物，得到超级SWNT器件。发现每千分钟的悬浮SWNT的电阻小于不悬浮的SWNT，表明基材对SWNT的电性能的影响。状态电阻（类似于50 kΩ），8600cm（2）V-1 s（-1）的迁移率和大的开/关比（类似于10（5））的半导体悬浮的SWNT器件表示其优点和潜在的应用。

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来源
《Nanotechnology》 |2018年第17期|共6页
作者
Liu Siyu; Zhang Jian; Nshimiyimana Jean Pierre; Chi Xiannian; Hu Xiao; Wu Pei; Liu Jia; Wang Gongtang; Sun Lianfeng;
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作者单位

Shandong Normal Sch Phys &

Elect Jinan 250258 Shandong Peoples R China;

Natl Ctr Nanosci &

Technol CAS Key Lab Nanosyst &

Hierarch Fabricat Beijing 100190 Peoples R China;

Natl Ctr Nanosci &

Technol CAS Key Lab Nanosyst &

Hierarch Fabricat Beijing 100190 Peoples R China;

Natl Ctr Nanosci &

Technol CAS Key Lab Nanosyst &

Hierarch Fabricat Beijing 100190 Peoples R China;

Natl Ctr Nanosci &

Technol CAS Key Lab Nanosyst &

Hierarch Fabricat Beijing 100190 Peoples R China;

Natl Ctr Nanosci &

Technol CAS Key Lab Nanosyst &

Hierarch Fabricat Beijing 100190 Peoples R China;

Natl Ctr Nanosci &

Technol CAS Key Lab Nanosyst &

Hierarch Fabricat Beijing 100190 Peoples R China;

Shandong Normal Sch Phys &

Elect Jinan 250258 Shandong Peoples R China;

Natl Ctr Nanosci &

Technol CAS Key Lab Nanosyst &

Hierarch Fabricat Beijing 100190 Peoples R China;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
single-walled carbon nanotubes; filed effect transistor; ultraclean device;

机译：单壁碳纳米管;场效应晶体管;超薄装置;

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专利

1. Ultraclean individual suspended single-walled carbon nanotube field effect transistor [J] . Liu Siyu, Zhang Jian, Nshimiyimana Jean Pierre, Nanotechnology . 2018,第17期

机译：超薄单独悬挂的单壁碳纳米管场效应晶体管
2. Suspended single-walled carbon-nanotube field-effect transistor for gas sensing application [J] . Wada Yukiko, Fujita Yoshihiro, Takei Kuniharu, Japanese journal of applied physics . 2015,第6S1期

机译：悬浮单壁碳纳米管场效应晶体管，用于气体传感应用
3. Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube field-effect transistors [J] . Ji Cao, Adrian M. lonescu Applied Physics Letters . 2012,第6期

机译：自对准横向双栅悬浮体单壁碳纳米管场效应晶体管
4. Self-aligned double-gate suspended-body single-walled carbon nanotube field-effect-transistors [C] . Cao Ji, Ionescu Adrian M. 41st European Solid-State Device Research Conference . 2011

机译：自对准双栅悬浮体单壁碳纳米管场效应晶体管
5. Synthesis of single-walled carbon nanotubes and characterization of nanotube-based field-effect transistors. [D] . Kim, Woong. 2005

机译：单壁碳纳米管的合成和基于纳米管的场效应晶体管的表征。
6. Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer [O] . Qiuhong Tan, Qianjin Wang, Yingkai Liu, 2018

机译：具有HfO2缺陷控制层的单壁碳纳米管为主的微米级条纹图案化铁电场效应晶体管
7. Integrated Circuits Based on Individual Single-Walled Carbon Nanotube Field-Effect Transistors [O] . Ryu Hyeyeon 2012

机译：基于单个单壁碳纳米管场效应晶体管的集成电路

Ultraclean individual suspended single-walled carbon nanotube field effect transistor

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