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Infrared photoconductivity and photovoltaic response from nanoscale domains of PbS alloyed with thorium and oxygen

机译:从钍和氧气合金的PBS纳米级域的红外光电导和光伏响应

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摘要

Thin films of lead sulfide alloyed with thorium and oxygen were deposited on GaAs substrates and processed to produce a photo-diode structure. Structural, optical and electrical characterizations indicate the presence of small nanoscale domains (NDs) that are characterized by dense packaging, high quality interfaces and a blue-shift of the energy bandgap toward the short wavelength infrared range of the spectrum. Photocurrent spectroscopy revealed a considerable photoconductivity that is correlated with excitation of carriers in the NDs of lead sulfide alloyed with thorium and oxygen. Furthermore, the appearance of a photovoltaic effect under near infrared illumination indicates a quasi-type II band alignment at the interface of the GaAs and the film of NDs.
机译:用钍和氧合金合金硫化物的薄膜沉积在GaAs基材上并加工以产生光电二极管结构。 结构,光学和电学特性表明存在小纳米级结构域(NDS),其特征在于致密包装,高质量接口和能量带隙的蓝色偏移朝向光谱的短波长的红外线范围。 光电流光谱揭示了具有相当大的光电导性,其与与钍和氧的铅硫化物NDS中的载体的激发相关。 此外,在近红外照明下的光伏效果的外观表示在GaAs和NDS膜的界面处的准型II带对准。

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