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Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary

机译：用晶界观察单层CVD MOS2中的Wigner晶相和Ripplon限制行为

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Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS2 of 2D materials also contains 2DEG in an atomic layer as a field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in the FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility mu was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not been previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS2.
机译：二维电子气体（2deg）在冷凝物质中至关重要，存在于液氦表面上和半导体界面的表面上。 2D材料的单层MOS2还含有2deg在原子层中作为场效应晶体管（FET）超薄通道。在该研究中，我们通过化学气相沉积方法合成双三角MOS2，以获得用于在FET通道中形成纹波结构的晶界。当温度高于约175 k时，电子迁移率μ的温度依赖性与先前实验和理论预测中的那些符合。当温度低于约175 k时，迁移率随温度降低;这种发现也与之前的实验相一致。我们是第一个通过使用Wigner晶相来解释减少移动行为的研究组，并发现在较低温度下的Ripplon限制行为的温度独立性。虽然已经通过理论和实验在液氦表面上研究了这些迁移行为，但它们之前未在2D材料和半导体中分析。我们是第一个报告液氦表面和单层MOS2的类似温度依赖性行为的研究组。

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