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Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics

机译:分子金属氧化物电子中的尺寸依赖的单电子传递和半金属到绝缘体转变

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摘要

All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV-vis spectroscopy and AFM measurements show that this functionality stems from the films' ability to structurally tune their HOMO-LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on siO(2) at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures' plausibility for on-chip molecular electronics operative at room temperature.
机译:基于多氧化素分子(POMS)的全无机自排列的分子过渡金属氧化物高温进行制造和测试在新兴电子器件中的电子可调谐组件。 POM Hyperstructure揭示了可调谐充电水平的充电节点的巨大潜力以及用于光伏堆叠的界面电子/空穴注射的增强剂。 STM,UPS,UV-Vis光谱和AFM测量表明,该功能源于薄膜在室温下在结构上调其同性恋水平和电子定位长度的能力。通过在溶液中调整POM纳米光幕尺寸,在SiO(2)上的单个纳米球风扇上以低至3伏的电压监测四个数量级的自掺杂和电流调制。通过单一电子隧穿的结构驱动的绝缘体 - 半金属转换和尺寸依赖电流调节,并相对于分子实体的立体化学和电子结构检查和检查。这将自组装的值延伸为相关长度和电子性质调谐的工具,并演示POM Hyperstructule在室温下运行的片上分子电子的合理性。

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