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Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors

机译：电解质门控单晶亚克脂纳米线效应晶体管的容易制备

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摘要

Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V-1 s(-1).
机译：氧化物半导体被认为是新一代高性能电子设备的最前沿候选者之一。然而，氧化物电子器件的主要限制之一是同样良好的空穴导通半导体的稀缺性，其与其电子导电对应物相比，可以为p型金属氧化物半导体场效应晶体管提供相同的性能。在该任务中，这里我们提出了用于单晶亚氧化物（Cu2O）纳米线的批量合成方法，其化学和形态学表征，以及用于便携式的电解质门控，低功率，场效应晶体管（FET）中的有源通道材料的适合性和灵活的逻辑电路。本研究中使用的本体合成方法包括两个步骤：即纳米线的水热合成和去除表面有机污染物。然后将表面处理的纳米线分散在接收器基板上，其中被动电极被构造，然后打印作为栅极绝缘体的复合固体聚合物电解质（CSPE）。发现各个纳米线FET的特征电性能非常有趣，包括0.15cm（2）V-1 s（-1）的累积模式操作和场效应迁移率。

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  • 来源
    《Nanotechnology》 |2016年第41期|共8页
  • 作者

    Stoesser Anna; von Seggern Falk; Purohit Suneeti; Nasr Babak; Kruk Robert; Dehm Simone; Wang Di; Hahn Horst; Dasgupta Subho;

  • 作者单位

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

    Karlsruhe Inst Technol Inst Nanotechnol D-76344 Karlsruhe Eggenstein Leop Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    nanowires; oxide semiconductors; field-effect transistors; polypyrrole; MOSFETs; copper oxide;

    机译：纳米线;氧化物半导体;场效应晶体管;聚吡咯;MOSFET;氧化铜;

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