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首页> 外文期刊>Nanotechnology >Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO3-x memristors
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Microstructure and dynamics of vacancy-induced nanofilamentary switching network in donor doped SrTiO3-x memristors

机译：施主掺杂SRTIO3-X忆阻器中空位诱导的纳米丝交换网络的微观结构和动力学

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Donor doping of perovskite oxides has emerged as an attractive technique to create high performance and low energy non-volatile analog memories. Here, we examine the origins of improved switching performance and stable multi-state resistive switching in Nb-doped oxygen-deficient amorphous SrTiO3 (Nb:a-STOx) metal-insulator-metal (MIM) devices. We probe the impact of substitutional dopants (i.e., Nb) in modulating the electronic structure and subsequent switching performance. Temperature stability and bias/time dependence of the switching behavior are used to ascertain the role of substitutional dopants and highlight their utility to modulate volatile and non-volatile behavior in a-STOx devices for adaptive and neuromorphic applications. We utilized a combination of transmission electron microscopy, photoluminescence emission properties, interfacial compositional evaluation, and activation energy measurements to investigate the microstructure of the nanofilamentary network responsible for switching. These results provide important insights into understanding mechanisms that govern the performance of donor-doped perovskite oxide-based memristive devices.
机译：供体掺杂钙钛矿氧化物作为一种吸引力的技术，可以创造高性能和低能量非易失性模拟存储器。在这里，我们研究了改进的开关性能和稳定的多状态电阻切换在NB掺杂的氧缺陷无定形SRTIO3（NB：A-STOX）金属 - 绝缘体 - 金属（MIM）器件中的起源。我们探讨了替代掺杂剂（即，NB）在调制电子结构和随后的开关性能时的影响。改性行为的温度稳定性和偏压/时间依赖性来确定取代掺杂剂的作用，并突出显示其效用，以调节A-STOX装置中的挥发性和非挥发性行为进行适应性和神经形态应用。我们利用透射电子显微镜，光致发光排放特性，界面组成评价和激活能量测量的组合，以研究负责切换的纳米丝网的微观结构。这些结果对理解机制提供了重要的见解，该机制控制了供体掺杂的钙钛矿氧化物基忆料器件的性能。

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