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首页> 外文期刊>Nanotechnology >Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots
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Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots

机译：黑色磷量子点二榄钼二硫化钼的表面电荷转移掺杂

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摘要

Monolayer molybdenum disulfide (MoS2), consisting of covalently bonded S-Mo-S sandwiched layers, has high carrier mobility and a direct bandgap of 1.8 eV, offering properties for electronic and optoelectronic devices with high performance. Usually, it is essential to modulate the carrier concentrations and conductivities of monolayer MoS2 for practical applications. In this paper, black phosphorus (BP) quantum dots (QDs) were synthesized by a liquid exfoliation method successfully, and have a diameter of similar to 5 nm as confirmed with a transmission electron microscope (TEM). BP QDs were utilized to decorate monolayer MoS2 grown by chemical vapor deposition (CVD). The Raman and PL spectra of the BP QD/MoS2 hybrid structure clearly indicate that BP QDs are an effective n-type doping scheme for monolayer MoS2. Backgated monolayer MoS2 transistors were fabricated and show an improved source-drain current after BP QD modifications. A high electron concentration of similar to 5.39 x 1012 cm(-2) in monolayer MoS2 was achieved, which is beneficial for designing FETs and photodetector devices with novel functions.
机译：由共价键合的S-MO-S夹层组成的单层钼二硫化物（MOS2）具有高载流子迁移率和1.8eV的直接带隙，为具有高性能具有高性能的电子和光电器件提供性能。通常，对于实际应用，必须调制单层MOS2的载流子浓度和电导率。在本文中，通过成功通过液体剥离方法合成黑磷（BP）量子点（QD），并且具有与用透射电子显微镜（TEM）确认的5nm的直径。使用BP QD来装饰通过化学气相沉积（CVD）生长的单层MOS2。 BP QD / MOS2混合结构的拉曼和PL光谱清楚地表明BP QD是用于单层MOS2的有效的n型掺杂方案。基于BP QD修改后，制造了回栅单层MOS2晶体管并显示出改进的源极 - 漏极电流。实现了在单层MOS2中类似于5.39×1012cm（-2）的高电子浓度，这对于设计具有新功能的FET和光电探测器装置是有益的。

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