• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation
【24h】

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

机译：用氧化铝表面钝化具有多层石墨烯透明电极的InGaN / GaN Nanorod LED的显着性能增强

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 nm alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.
机译：纳米纹理表面提供理想的平台，用于有效地捕获和发光。然而，增加的表面积与纳米结构诱导的表面缺陷组合的表面积。使用反应离子蚀刻（RIE）对设备的有源区产生负面影响，因此，大大降低了器件性能。在这项工作中，研究了结构缺陷和表面状态对由IngaN量子孔的上下C平面GaN的自上而下RIE制造的InGaN / GaN纳米棒（NR）发光二极管（LED）的光学和电能的影响。在适当的表面处理之后，可以显示显着改善的装置性能。因此，成功地应用了KOH溶液中损坏材料的湿化学除去损坏的材料，其作为宽带凝血氧化物仅为宽带氧化物的原子层沉积。拉曼光谱揭示最初压缩的indaN / GaN LED层叠层变成了几乎完全放松的GaN，并且在Rie蚀刻NRS之后部分松弛的Ingan组合。时间相关的单光子计数提供了既有处理 - 化学蚀刻和氧化铝沉积 - 减少非辐射重组的途径数。稳态光致发光显示，在额外氧化铝钝化后KOH和80％后，NR LED的发光性能增加了约50％。最后，制造了具有悬浮石墨烯接触的完整NR LED器件，其中通过电致发光测量成功地证明了氧化铝钝化的有效性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号