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Piezoresistive effect of n-type < 111 >-oriented Si nanowires under large tension/compression

机译:N型<111-型Si纳米线在大张力/压缩下的压阻效应

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摘要

Small-scale samples enable us to understand changes in physical properties under larger strain due to their higher tolerance to deformation. In this study, the piezoresistive character of n-type < 111 >-oriented Si nanowires under large strain was measured during tensile and compressive deformations. The Si nanowires were directly cut from the wafer using top-down technology and deformed while capturing their electrical properties inside a transmission electron microscope. The experimental results show that both tensile and compressive deformation enhanced their electrical transport properties. The piezoresistance coefficient is of the same order of magnitude as its bulk counterpart, but half as large, which may be attributed to a larger strain magnitude. We also studied the circulatory characteristics and influence of electron beam radiation. This study provided new physical insights into piezoresistive effects under large strain.
机译:小规模样本使我们能够理解由于其较高的变形耐受性而在较大的应变下的物理性质变化。 在该研究中,在拉伸和压缩变形期间测量在大菌株下的N型<111> orientedSi纳米线的压阻性特征。 使用自上而下的技术直接从晶片切割Si纳米线并使它们在透射电子显微镜内部捕获其电性能的同时变形。 实验结果表明,拉伸和压缩变形均增强其电气传输性能。 压阻系数与其散装对应物相同的数量级,但是大大,其可能归因于更大的应变幅度。 我们还研究了电子束辐射的循环特性和影响。 本研究提供了对大应变下的压阻效应进行了新的身体洞察。

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  • 来源
    《Nanotechnology》 |2017年第9期|共7页
  • 作者单位

    Beijing Univ Technol Beijing Key Lab Microstruct &

    Property Adv Mat Inst Microstruct &

    Properties Adv Mat Beijing 100124 Peoples R China;

    Beihang Univ BUAA Sch Aeronaut Sci &

    Engn Inst Solid Mech Beijing 100191 Peoples R China;

    Beihang Univ BUAA Sch Aeronaut Sci &

    Engn Inst Solid Mech Beijing 100191 Peoples R China;

    Beijing Univ Technol Beijing Key Lab Microstruct &

    Property Adv Mat Inst Microstruct &

    Properties Adv Mat Beijing 100124 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    silicon piezoresistance; tensile strain; compressive strain;

    机译:硅压阻;拉伸应变;压缩菌株;

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