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Self-organized semiconductor nano-network on graphene

机译：石墨烯自组织半导体纳米网络

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摘要

A network structure consisting of nanomaterials with a stable structural support and charge path on a large area is desirable for various electronic and optoelectronic devices. Generally, network structures have been fabricated via two main strategies: (1) assembly of pre-grown nanostructures onto a desired substrate and (2) direct growth of nanomaterials onto a desired substrate. In this study, we utilized the surface defects of graphene to form a nano-network of ZnO via atomic layer deposition (ALD). The surface of pure and structurally perfect graphene is chemically inert. However, various types of point and line defects, including vacancies/adatoms, grain boundaries, and ripples in graphene are generated by growth, chemical or physical treatments. The defective sites enhance the chemical reactivity with foreign atoms. ZnO nanoparticles formed by ALD were predominantly deposited at the line defects and agglomerated with increasing ALD cycles. Due to the formation of the ZnO nano-network, the photocurrent between two electrodes was clearly changed under UV irradiation as a result of the charge transport between ZnO and graphene. The line patterned ZnO/graphene (ZnO/G) nanonetwork devices exhibit sensitivities greater than ten times those of non-patterned structures. We also confirmed the superior operation of a fabricated flexible photodetector based on the line patterned ZnO/G nano-network.
机译：对于各种电子和光电器件，期望由具有稳定结构支撑和电荷路径的纳米材料组成的网络结构是理想的。通常，通过两种主要策略制造网络结构：（1）将预先生长的纳米结构组装到所需的基材上，（2）将纳米材料的直接生长到所需的基底上。在这项研究中，我们利用石墨烯的表面缺陷通过原子层沉积（ALD）形成ZnO的纳米网络。纯和结构上完美的石墨烯表面是化学惰性的。然而，通过生长，化学或物理治疗产生各种类型的点和线缺陷，包括空位/ adatoms，晶界和石墨烯中的波纹。缺陷的位点增强了与外部原子的化学反应性。通过ALD形成的ZnO纳米颗粒主要沉积在线缺陷并随着ALD循环增加而凝聚。由于ZnO纳米网络的形成，由于ZnO和石墨烯之间的电荷输送，在紫外线照射下清楚地改变两个电极之间的光电流。该线图案化ZnO /石墨烯（ZnO / G）纳米型器件具有大于非图案结构的敏感性的敏感性。我们还基于图案化的ZnO / G纳米网络的线路确认了制造的柔性光电探测器的优越操作。

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  • 来源
    《Nanotechnology》 |2017年第14期|共7页
  • 作者

    Son Dabin; Kim Sang Jin; Lee Seungmin; Bae Sukang; Kim Tae-Wook; Kang Jae-Wook; Lee Sang Hyun;

  • 作者单位

    Korea Inst Sci &

    Technol Inst Adv Composite Mat Jeollabuk 55324 South Korea;

    Korea Inst Sci &

    Technol Inst Adv Composite Mat Jeollabuk 55324 South Korea;

    Korea Inst Sci &

    Technol Inst Adv Composite Mat Jeollabuk 55324 South Korea;

    Korea Inst Sci &

    Technol Inst Adv Composite Mat Jeollabuk 55324 South Korea;

    Korea Inst Sci &

    Technol Inst Adv Composite Mat Jeollabuk 55324 South Korea;

    Chonbuk Natl Univ Dept Flexible &

    Printable Elect Jeonju 54896 South Korea;

    Korea Inst Sci &

    Technol Inst Adv Composite Mat Jeollabuk 55324 South Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    graphene; ZnO; self-organized; ALD;

    机译：石墨烯;ZnO;自我组织;ALD;

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