Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

Kim Dae-Hwan; Jeong Hwan-Seok; Kwon Hyuck-In

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Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

机译：高迁移率氧氮化锌薄膜晶体管的电不稳定性

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We investigate the effects of water absorption on the electrical performance and stability in highmobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNY bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

机译：我们研究了吸水率对高可氧锌氧化物（Znon）薄膜晶体管（TFT）中的电气性能和稳定性的影响。 Znon TFT表现出较小的场效应迁移率，下导通电压，更高的亚阈值斜率，并且在暴露于水后，在正栅极偏压下的电稳定性下具有劣化的电稳定性。从霍尔测量开始，在吸水后在Znon薄膜中观察到电子浓度的增加和霍尔迁移率降低。观察到的现象主要归因于水分子诱导的ZnxNy键的缺陷率升高以及基于X射线光电子光谱分析分析的Znon薄膜内的氧气空位。

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来源
《Nanotechnology》 |2017年第9期|共6页
作者
Kim Dae-Hwan; Jeong Hwan-Seok; Kwon Hyuck-In;
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作者单位

Chung Ang Univ Sch Elect &

Elect Engn Seoul South Korea;

Chung Ang Univ Sch Elect &

Elect Engn Seoul South Korea;

Chung Ang Univ Sch Elect &

Elect Engn Seoul South Korea;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
zinc oxynitride thin-film transistor; environmental water; electrical performance and stability; defective ZnXNY bond;

机译：氧氮化锌薄膜晶体管;环境水;电气性能和稳定性;有缺陷的Znxny债券;

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1. Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure [J] . Kim Dae-Hwan, Jeong Hwan-Seok, Kwon Hyuck-In Nanotechnology . 2017,第9期

机译：高迁移率氧氮化锌薄膜晶体管的电不稳定性
2. Effects of Tantalum Doping on Electrical Characteristics of High-Mobility Zinc Oxynitride Thin-Film Transistors [J] . Hiroshi Tsuji, Tatsuya Takei, Mitsuru Nakata, IEEE Electron Device Letters . 2019,第9期

机译：钽掺杂对高迁移率氮氧化锌薄膜晶体管电学特性的影响
3. Effect of Channel Layer Thickness on Electrical and Thermal Stabilities of High-Mobility Zinc Oxynitride Thin-Film Transistors [J] . Kim Dae-Hwan, Park Min Jae, Kwon Hyuck-In ECS Journal of Solid State Science and Technology . 2017,第9期

机译：通道层厚度对高迁移率氧化锌薄膜晶体管的电气和热稳定性的影响
4. Electrical Characteristics of Fluorine-Doped Zinc Oxynitride Thin-Film Transistors [C] . Hyoung-Do Kim, Jong Heon Kim, Hyun-Suk Kim Meeting of the Electrochemical Society . 2017

机译：氟掺杂氧氮化锌薄膜晶体管的电气特性
5. Investigation of Electrical Instabilities and Interface Charge in Zinc Oxide Thin-Film Transistors with High-k Dielectrics. [D] . Siddiqui, Jeffrey Jameel. 2012

机译：高k电介质氧化锌薄膜晶体管的电不稳定性和界面电荷的研究。
6. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric [O] . Seungbeom Choi, Kyung-Tae Kim, Sung Kyu Park, 2019

机译：使用掺Sr的Al2O3栅介质的高迁移率喷墨印刷铟镓锌氧化物薄膜晶体管
7. Boosting Carrier Mobility in Zinc Oxynitride Thin-Film Transistors via Tantalum Oxide Encapsulation [O] . -1

机译：通过氧化钽封装促进氧化锌薄膜晶体管中的载流子迁移率
8. High-mobility Carbon-nanotube Thin-film Transistors on a Polymeric Substrate. [R] . E. S. Snow J. P. Novak M. G. Ancona P. M. Campbell 2005

机译：聚合物基板上的高迁移率碳纳米管薄膜晶体管。

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

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