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Fast synthesis of ultrathin ZnO nanowires by oxidation of Cu/Zn stacks in low-pressure afterglow

机译：低压余量氧化Cu / Zn堆栈快速合成超薄ZnO纳米线

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摘要

The synthesis of ultrathin, single-crystalline zinc oxide nanowires was achieved by treating in a flowing microwave plasma oxidation process, zinc films coated beforehand by a sputtered thin buffer layer of copper. The aspect ratio of the nanowires can be controlled by the following experimental parameters: treatment duration, furnace temperature, oxygen concentration. An average diameter of 6 nm correlated with a mean length of 750 nm can be reached with a fairly high surface number density for very short treatments, typically less than 1 min. The oxidized samples are characterized by means of SEM, XRD, SIMS, HRTEM and EDX techniques. Structural characterization reveals that these nanowires are single-crystalline, with the wurtzite phase of ZnO. Nanowires are only composed of ZnO without copper particles inside or at the end of the nanowires. Temperature-dependent photoluminescence measurements confirm that ZnO nanowires are of high crystalline quality and thin enough to produce quantum confinement.
机译：通过在流动的微波等离子体氧化过程中处理超薄的单晶锌纳米线的合成，通过溅射的铜预先涂覆的锌膜来实现。纳米线的纵横比可以通过以下实验参数来控制：治疗持续时间，炉温，氧浓度。可以以相当高的表面密度密度达到650nm的平均长度为750nm的平均直径，用于非常短的处理，通常小于1分钟。氧化样品的特征在于SEM，XRD，SIM卡，HRTEM和EDX技术。结构表征显示，这些纳米线是单晶，ZnO的紫立岩相。纳米线仅由ZnO的ZnO组成而没有纳米线的末端或在纳米线的末端的铜颗粒组成。温度依赖性光致发光测量结果证实，ZnO纳米线具有高晶体质量和足够薄的以产生量子限制。

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