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Magnetic transition from dot to antidot regime in large area Co/Pd nanopatterned arrays with perpendicular magnetization

机译：具有垂直磁化强度的大面积Co / Pd纳米透明阵列中的磁过渡到防辐射状态

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摘要

We have studied the transition between two different magnetization reversal mechanisms for thin Co/Pd multilayers with perpendicular magnetic anisotropy, appearing in magnetic dot and antidot arrays, which were prepared by nanosphere lithography. Various ordered arrays of nanostuctures, both magnetic dots and antidots, were created by varying size and distance between the nanospheres employing RF-plasma etching. We have shown that the coercivity values reach a maximum for the array of antidots with a separation length close to the domain wall width. In this case, each area between three adjacent holes corresponds to a single domain configuration, which can be switched individually. On the contrary, small hole sizes and large volume of material between them results in domain wall propagation throughout the system accompanied by strong domain wall pinning at the holes. We have also shown the impact of edge effects on the magnetic anisotropy energy.
机译：我们已经研究了两种不同的磁化反转机制与垂直磁性各向异性的薄Co / Pd多层的两种不同磁化反转机制的过渡，出现在磁点和反向阵列中，通过纳米光刻制备。 通过不同于采用RF - 等离子体蚀刻的纳米球之间的尺寸和距离来产生各种有序的纳米阵列，磁点和防光剂。 我们已经表明，矫顽力值对于靠近畴壁宽度的分离长度达到最大值。 在这种情况下，三个相邻孔之间的每个区域对应于单个域配置，其可以单独切换。 相反，小孔尺寸和大量的材料之间导致整个系统的畴壁传播，伴随着在孔处的强域壁钉钉。 我们还显示了边缘影响对磁各向异性能量的影响。

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