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Impact of scaling base thickness on the performance of heterojunction phototransistors

机译：缩放基础厚度对异质结晶体管性能的影响

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摘要

In this letter we report the effect of vertical scaling on the optical and electrical performance of mid-wavelength infrared heterojunction phototransistors based on type-II InAs/GaSb/AlSb superlattices. The performance of devices with different base thickness was compared as the base was scaled from 60 down to 40 nm. The overall optical performance shows enhancement in responsively, optical gain, and specific detectivity upon scaling the base width. The saturated responsivity for devices with 40 nm bases reaches 8845 and 9528 A W-1 at 77 and 150 K, respectively, which is almost five times greater than devices with 60 nm bases. The saturated optical gain for devices with 40 nm bases is measured as 2760 at 77 K and 3081 at 150 K. The devices with 40 nm bases also exhibit remarkable enhancement in saturated current gain, with 17690 at 77 K, and 19050 at 150 K.
机译：在这封信中，我们根据II型INAS / GASB / ALSB超晶格报告垂直缩放对中波长红外异质结光电晶体管的光学和电气性能的影响。 将具有不同基础厚度的装置的性能与底座相比为60〜40nm。 整体光学性能在缩放基础宽度时响应于响应，光学增益和特定探测的增强。 具有40nm碱基的装置的饱和反应性分别在77和150k处达到8845和9528AW-1，这几乎比具有60nm碱基的装置大的几乎五倍。 具有40nm碱基的装置的饱和光学增益在150k下以77k和3081测量2760。具有40nm碱基的器件也表现出饱和电流增益的显着增强，17690处，77 k，19050 k处为150 k。

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