Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

Niu G.; Schubert M. A.; Sharath S. U.; Zaumseil P.; Vogel S.; Wenger C.; Hildebrandt E.; Bhupathi S.; Perez E.; Alff L.; Lehmann M.; Schroeder T.; Niermann T.

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Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

机译：HFO2 / HFO2-X双层结构上的电子全息术，具有多电平电阻切换性能

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Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x/TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

机译：揭示负责HFO2基电阻随机存取存储器（RRAM）器件的电阻切换的缺氧导电细丝（CFS）的物理性质代表了由于氧空位相关缺陷性质和纳米尺寸而具有具有挑战性的任务 CFS。作为这一目标的第一个重要步骤，我们通过实施透射电子显微镜电子全息术以及能量分散X射线光谱，在这项工作中证明了直接可视化和对缺氧无定形HFO2-X的物理化学性质的研究 HFO2 / HFO2-X双层异质结构，由反应分子束外延实现。此外，与单层器件相比，Pt / hfo2 / hfo2-x /锡双层器件显示具有多级行为的增强电阻切换特性，表明它们作为未来神经形态计算应用中的电子突触的潜力。

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来源
《Nanotechnology》 |2017年第21期|共7页
作者
Niu G.; Schubert M. A.; Sharath S. U.; Zaumseil P.; Vogel S.; Wenger C.; Hildebrandt E.; Bhupathi S.; Perez E.; Alff L.; Lehmann M.; Schroeder T.; Niermann T.;
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作者单位

Xi An Jiao Tong Univ Elect Mat Res Lab Key Lab Minist Educ Xian 710049 Peoples R China;

IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;

Tech Univ Darmstadt Inst Mat Sci D-64287 Darmstadt Germany;

IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;

Tech Univ Darmstadt Inst Mat Sci D-64287 Darmstadt Germany;

IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;

Tech Univ Darmstadt Inst Mat Sci D-64287 Darmstadt Germany;

IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;

IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;

Tech Univ Darmstadt Inst Mat Sci D-64287 Darmstadt Germany;

Tech Univ Berlin Inst Opt &

Atomare Phys Str 17 Juni 135 D-10623 Berlin Germany;

IHP Technol Pk 25 D-15236 Frankfurt Oder Germany;

Tech Univ Berlin Inst Opt &

Atomare Phys Str 17 Juni 135 D-10623 Berlin Germany;

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正文语种 eng
中图分类特种结构材料;
关键词
RRAM; electron holography; HfO2; resistive switching; multi-level;

机译：RRAM;电子全息;HFO2;电阻切换;多级;

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3. Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties [J] . Niu G., Schubert M. A., Sharath S. U., Nanotechnology . 2017,第21期

机译：HFO2 / HFO2-X双层结构上的电子全息术，具有多电平电阻切换性能
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5. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure [J] . Liu Jian, Yang Huafeng, Ma Zhongyuan, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2018,第2期

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6. Resistive switching effects in Pt/HfO2/TiN MIM structures and their dependence on bottom electrode interface engineering [C] . Paskaleva A., Hudec B., Jancovic P., 2014 29th International Conference on Microelectronics Proceedings . 2014

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Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

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