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首页> 外文期刊>Nanotechnology >Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations
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Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations

机译：使用纳米镜电学特性的金属/ AlGaN / GaN界面处屏障不均匀的直接证据

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摘要

The existence of barrier inhomogeneities at metal-semiconductor interfaces. is believed to be one of the reasons for the. non-ideal behaviour of. Schottky contacts. In general, barrier inhomogeneities are modelled using a. Gaussian distribution of barrier heights of nanoscale patches having low and high barrier heights, and the. standard deviation of this distribution roughly estimates the level of barrier inhomogeneities. In the present work, we provide. direct experimental evidence of barrier inhomogeneities by performing electrical characterizations on individual nanoscale patches and, further, obtaining the magnitude of these inhomogeneities. Localized current-voltage measurements on individual nanoscale patches were. performed using conducting atomic force microscopy (CAFM) whereas surface potential variations on nanoscale dimensions were. investigated using Kelvin probe force microscopy (KPFM) measurements. The. CAFM measurements revealed the distribution of barrier heights, which is attributed to surface potential variations at nanoscale dimensions, as obtained from KPFM measurements. The present work is an effort to provide. direct evidence of barrier inhomogeneities, finding their origin and magnitude by combining CAFM and KPFM techniques and correlating their findings.
机译：金属半导体界面处的屏障不均匀性存在。被认为是其中的原因之一。非理想行为。肖特基联系人。通常，屏障不均匀性使用a进行建模。高斯分布的纳米级斑块具有低屏障高度和高屏障高度的屏障高度。该分布的标准偏差大致估计屏障不均匀程度。在目前的工作中，我们提供。通过对单个纳米级贴片进行电气表征的直接实验证据，进一步地获得这些不均匀性的幅度。单个纳米级贴片上的局部电流电压测量值是。使用导电原子力显微镜（CAFM）进行，而纳米尺寸的表面电位变化是。使用kelvin探针力显微镜（KPFM）测量研究。这。 CAFM测量揭示了屏障高度的分布，其归因于从KPFM测量获得的纳米级尺寸的表面电位变化。目前的工作是提供的努力。通过结合CAFM和KPFM技术并关联它们的发现，通过与其发现相关的直接证据，找到它们的起源和幅度。

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