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首页> 外文期刊>Nanotechnology >The role of mesoscopic structuring on the intermixing of spin-polarised conduction channels in thin-film ferromagnets for spintronics
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The role of mesoscopic structuring on the intermixing of spin-polarised conduction channels in thin-film ferromagnets for spintronics

机译：介于介绍结构对纺丝膜铁磁体中旋转偏振电导通道混合的作用

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The separation of spin-up and spin-down conduction channels is fundamental to electronic transport in ferromagnets and essential for spintronic functionality. The spin states available for conduction are defined by the ferromagnetic material, but additional physical factors can affect scattering and modify the spin-dependence of conduction. Here the effect of mesoscopic structuring, arising during the growth of ferromagnetic thin films, on the electronic transport was investigated. Resistivity and anisotropic magnetoresistance were measured in a series of Ni80Fe20 thin films as a function of nominal film thickness from 3 nm up to 20 nm. The observed thickness dependence of the resisivity and magnetic anisotropy of resistivity are interpreted using a model that accounts for the macroscopic structuring from the growth of the films and incorporates a structural dependence of the spin-flip scattering. The model shows good agreement for both the thickness dependence of the resistivity and the reduction of the anisotropic magnetoresistivity. The latter indicating that increasing mixing of the conducting spin channels occurs in ultra-thin films, mainly a consequence of macroscopic structuring of the films.
机译：旋转和旋转导通通道的分离是铁磁磁带中电子传输的基础，对旋转函数是必不可少的。可用于传导的旋转状态由铁磁材料限定，但额外的物理因素可以影响散射并改变传导的旋转依赖性。这里研究了在铁磁薄膜生长期间产生的介观结构的效果在电子传输过程中。在一系列Ni80Fe20薄膜中测量电阻率和各向异性磁阻，其标称膜厚度为3nm至20nm的函数。使用用于从膜的生长的宏观结构的模型解释了电阻率的再见度和电阻率磁各向异性的观察到的厚度依赖性并包含旋转散射的结构依赖性。该模型显示了电阻率的厚度依赖性以及各向异性磁阻的减少。后者表明在超薄膜中发生越来越多的导电旋转通道的混合，主要是薄膜宏观结构的结果。

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