Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage

Amjadipour Mojtaba; MacLeod Jennifer; Lipton-Duffin Josh; Iacopi Francesca; Motta Nunzio

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Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage

机译：在Si（111）上的FIB图案化3C-SiC纳米结构上的外延石墨烯生长：减少碾磨损伤

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Epitaxial growth of graphene on SiC is a scalable procedure that does not require any further transfer step, making this an ideal platform for graphene nanostructure fabrication. Focused ion beam (FIB) is a very promising tool for exploring the reduction of the lateral dimension of graphene on SiC to the nanometre scale. However, exposure of graphene to the Ga+ beam causes significant surface damage through amorphisation and contamination, preventing epitaxial graphene growth. In this paper we demonstrate that combining a protective silicon layer with FIB patterning implemented prior to graphene growth can significantly reduce the damage associated with FIB milling. Using this approach, we successfully achieved graphene growth over 3C-SiC/Si FIB patterned nanostructures.

机译：SiC上石墨烯的外延生长是一种不需要进一步转移步骤的可扩展程序，使得这是石墨烯纳米结构制造的理想平台。聚焦离子束（FIB）是一种非常有前途的工具，用于探索石墨烯的横向尺寸对纳米级的横向尺寸。然而，石墨烯对Ga +光束的暴露通过无制和污染，防止外延石墨烯生长引起显着的表面损伤。在本文中，我们证明将保护性硅层与石墨烯生长之前实施的FIB图案相结合，可以显着降低与FIB铣削相关的损伤。使用这种方法，我们通过3C-SiC / Si Fib图案化纳米结构成功实现了石墨烯生长。

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来源
《Nanotechnology》 |2017年第34期|共8页
作者
Amjadipour Mojtaba; MacLeod Jennifer; Lipton-Duffin Josh; Iacopi Francesca; Motta Nunzio;
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作者单位

Queensland Univ Technol Sci &

Engn Fac Sch Chem Phys &

Mech Engn Brisbane Qld Australia;

Queensland Univ Technol Sci &

Engn Fac Sch Chem Phys &

Mech Engn Brisbane Qld Australia;

Queensland Univ Technol Sci &

Engn Fac Inst Future Environm Cent Analyt Res Facil Brisbane Qld Australia;

Univ Technol Sydney Fac Engn &

Informat Technol Sch Comp &

Commun Sydney NSW Australia;

Queensland Univ Technol Sci &

Engn Fac Sch Chem Phys &

Mech Engn Brisbane Qld Australia;

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原文格式 PDF
正文语种 eng
中图分类特种结构材料;
关键词
graphene; SiC; epitaxy; focused ion beam; patterning;

机译：石墨烯;SiC;外延;聚焦离子束;图案化;

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1. Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage [J] . Amjadipour Mojtaba, MacLeod Jennifer, Lipton-Duffin Josh, Nanotechnology . 2017,第34期

机译：在Si（111）上的FIB图案化3C-SiC纳米结构上的外延石墨烯生长：减少碾磨损伤
2. Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth [J] . Hwang Yubin Journal of Applied Physics . 2012,第10期

机译：外延石墨烯生长的早期阶段，Si去除的3C-SiC（111）表面上碳原子的原子行为
3. Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth [J] . Yubin Hwang, Eung-Kwan Lee, Heechae Choi, Journal of Applied Physics . 2012,第10期

机译：外延石墨烯生长的早期阶段，Si去除的3C-SiC（111）表面上碳原子的原子行为
4. Epitaxial growth of 3C-SiC(111) on Si wafer from tetramethylsilane by rapid thermal chemical vapor deposition : growth mechanism [C] . International conference on silicon carbide and related materials . 1996

机译：通过快速热化学气相沉积从四甲基硅烷的Si晶片上的3C-SiC（111）的外延生长：生长机理
5. Characterization and nanopatterning of functional organics on hydrogen-terminated silicon(111) and epitaxially grown graphene substrates. [D] . Kellar, Joshua A. 2009

机译：氢封端的硅（111）和外延生长的石墨烯基板上功能有机物的表征和纳米图案化。
6. Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer [O] . Sergey A. Kukushkin, Andrey V. Osipov 2021

机译：Si（111）衬底和3C-SiC（111）外延层之间的错位界面的异常性质
7. Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111) [O] . Darakchieva, Vanya, Boosalis, A., Zakharov, A. A., 2013

机译：3C-SiC（111）Si和C面上外延石墨烯的厚度和电子性能的大面积微焦点椭圆偏光光谱图

Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): reducing milling damage

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