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Investigating the impact of SEM chamber conditions and imaging parameters on contact resistance of in situ nanoprobing

机译:调查SEM室条件和成像参数对原位纳费力接触电阻的影响

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摘要

In this paper, we investigate the impact of vacuum chamber conditions (cleanliness level and vacuum pressure) and imaging parameters (magnification and acceleration voltage) of scanning electron microscopy (SEM) on the contact resistance of two-point in situ nanoprobing of nanomaterials. Using two typical types of conductive nanoprobe, two-point nanoprobing is performed on silicon nanowires, during which changing trends of the nanoprobing contact resistance with the SEM chamber conditions and imaging parameters are quantified. The mechanisms underlying the experimental observations are also explained. Through systematically adjusting the experimental parameters, the probe-sample contact resistance is significantly reduced from the mega-ohm level to the kilo-ohm level. The experimental results can serve as a guideline to evaluate electrical contacts of nanoprobing and instruct how to reduce the contact resistance in SEM-based, two-point nanoprobing.
机译:在本文中,我们研究了扫描电子显微镜(SEM)对纳米材料原位纳米植物的两点接触电阻的影响对真空室条件(清洁度水平和真空压力)和成像参数(SEM)的影响。 使用两个典型类型的导电纳米孔,在硅纳米线上进行两点纳米素,在此期间,量化纳米软件腔室条件和成像参数的纳米侵入接触电阻的趋势。 还解释了实验观察结果的机制。 通过系统地调节实验参数,探头 - 样品接触电阻从MEGA-OHM水平显着降低到千欧姆水平。 实验结果可以作为评估纳米侵入电触点的指导,并指导如何降低SEM为基础两点纳米植物的接触电阻。

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