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Precise characterization of self-catalyzed III-V nanowire heterostructures via optical second harmonic generation

机译：通过光学第二谐波产生自催化III-V纳米线异质结构的精确表征

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摘要

We demonstrate the utility of optical second harmonic generation (SHG) polarimetry to perform structural characterization of self-assembled zinc-blende/wurtzite III-V nanowire heterostructures. By analyzing four anisotropic SHG polarimetric patterns, we distinguish between wurtzite (WZ), zinc-blende (ZB) and ZB/WZ mixing III-V semiconducting crystal structures in nanowire systems. By neglecting the surface contributions and treating the bulk crystal within the quasi-static approximation, we can well explain the optical SHG polarimetry from the NWs with diameter from 200-600 nm. We show that the optical in-coupling and out-coupling coefficients arising from depolarization field can determine the polarization of the SHG. We also demonstrate micro-photoluminescence of GaAs quantum dots in related ZB and ZB/WZ mixing sections of core-shell NW structure, in agreement with the SHG polarimetry results. The ability to perform in situ SHG-based crystallographic study of semiconducting single and multi-crystalline nanowire heterostructures will be useful in displaying structure-property relationships of nanodevices.
机译：我们证明光学二次谐波生成（SHG）旋光的实用程序来执行的自组装闪锌矿/纤锌矿III-V纳米线异质结构的结构表征。通过分析4种各向异性SHG极化模式，我们纤锌矿之间（WZ）区分，闪锌矿（ZB）和ZB / WZ混合III-V半导体的晶体结构中的纳米线的系统。通过忽略表面贡献和处理所述准静态近似内的块状晶体，我们可以从井200-600纳米解释从与直径纳米线光学SHG旋光。我们表明，从去极化场引起的光学入耦合和出耦合系数可以确定SHG的偏振。我们还演示了在核 - 壳结构NW相关ZB和ZB / WZ混合区GaAs量子点的微型光致发光，与SHG旋光结果一致。在半导体单和多晶纳米线异质结构的基于SHG原位结晶研究来执行的能力将在显示纳米器件的结构 - 性能关系是有用的。

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  • 来源
    《Nanotechnology》 |2017年第39期|共9页
  • 作者

    Yu Ying; Wang Jing; Wei Yu-Ming; Zhou Zhang-Kai; Ni Hai-Qiao; Niu Zhi-Chuan; Wang Xue-Hua; Yu Si-Yuan;

  • 作者单位

    Sun Yat Sen Univ Sch Elect &

    Informat Technol Sch Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Sch Elect &

    Informat Technol Sch Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Sch Elect &

    Informat Technol Sch Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Sch Elect &

    Informat Technol Sch Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

    Chinese Acad Sci Inst Semicond State Key Lab Superlattices &

    Microstruct POB 912 Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond State Key Lab Superlattices &

    Microstruct POB 912 Beijing 100083 Peoples R China;

    Sun Yat Sen Univ Sch Elect &

    Informat Technol Sch Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Sch Elect &

    Informat Technol Sch Phys State Key Lab Optoelect Mat &

    Technol Guangzhou 510275 Guangdong Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    self-catalyzed III-V nanowires; second harmonic generation; crystal structure; radial quantum dot in nanowire heterostructure;

    机译：自催化III-V纳米线;二次谐波产生;晶体结构;纳米线异质结构的径向量子点;

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