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首页> 外文期刊>Nanotechnology >Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition
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Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

机译：单晶ZnO径向同质结发光二极管，由金属有机化学气相沉积制造

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摘要

ZnO radial p-n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. We report on ZnO radial p-n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p-n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. The reported research opens a pathway of realisation of production-compatible ZnO p-n junction LEDs.
机译：ZnO径向P-N结架构在更高的疗效和经济生产方面具有发光二极管（LED）技术的前进飞跃。我们报道了通过氢气辅助P型掺杂方法的全金属化学化学气相沉积（MOCVD）制备的ZnO径向P-N结的发光二极管。通过MOCVD与二甲基锌，叔丁醇和叔丁基膦的前体制备p型ZnO（P）薄膜。控制掺杂剂的前体流动导致掺杂浓度，霍尔迁移率和导电性的系统变化。此外，ZnO氢辅助磷掺杂的方法扩大了ZnO中掺杂行为的理解。通过在线上的位置控制的纳米/微线和结晶P型ZnO（P）径向壳生长，通过电线上的组合来证明ZnO径向P-N结的紫外和可见的电致发光。报告的研究开辟了一种实现兼容ZnO P-N结LED的实现途径。

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