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Role of atom redeposition during rising ion flux in ion-induced nanodot self-assembly on GaSb surfaces

机译:在煤气表面离子沟槽中上升离子通量期间原子重新沉降的作用

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In this study, a bottom-up approach of ion irradiation from hot cathode DC discharge plasma was used to investigate the role of energetic ion flux on the self-assembly of GaSb nanodots (NDs) at normal incidence. It was observed that, when increasing the flux in the range of 10(14)-10(15) ions cm(-2) s(-1), the lateral dimension and root mean square (RMS) roughness of NDs is reduced even at constant temperature conditions in the ion energy range from 400-800 eV. The evolution of the surface morphology for different flux regimes is observed in a numerical integration simulation using the nonlinear isotropic damped Kuramoto-Sivashinsky (DKS) equation. By introducing a redeposition term, the DKS equation is found to be in good qualitative agreement with the experimental results. We have demonstrated the linear dependency of the redeposition coefficient on the ion flux and also reported the nonlinear dependency on the thermal diffusion coefficient, transition time, and characteristic length with the flux. In accordance with the nonlinearity, we have also discussed the effect of the variation of the ion flux on the RMS roughness and lateral dimension of NDs.
机译:在该研究中,使用来自热阴极DC放电等离子体的离子照射的自下而上的方法来研究能量离子通量在正常发病率下对气体纳米蛋白(NDS)自组装的作用。观察到,当增加10(14)-10(15 )cm(-2)cc(-1)的范围内的通量时,均匀的横向尺寸和均方根(RMS)粗糙度降低在离子能量的恒定温度条件下,从400-800eV的电量范围内。在使用非线性各向同性阻尼Kuramoto-Sivashinsky(DKS)方程的数值积分模拟中,观察到不同助焊剂制度的表面形态的演变。通过引入重新沉降项,发现DKS方程与实验结果良好的定性协议。我们已经证明了重新定位系数对离子通量的线性依赖性,并且还报告了与通量的热扩散系数,转变时间和特征长度的非线性依赖性。根据非线性,我们还讨论了离子通量的变化对NDS的RMS粗糙度和横向尺寸的影响。

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