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Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

机译：掺杂对Si-掺杂GaN / AlN异质结构中运动器吸收的影响

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摘要

In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 mu m. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor in the nanowire geometry. Regarding the ISB characteristics, we report absorption covering 1.45-1.75 mu m using Ge-doped quantum wells, with comparable performance to Si-doped planar heterostructures. We also report similar ISB absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing ISB phenomena. The spectral shift of the ISB absorption as a function of the doping concentration due to many body effects confirms that Si and Ge efficiently dope GaN/AlN nanowire heterostructures.
机译：在本文中，我们研究带 - 能带和带间（ISB）Si和Ge掺杂的GaN / AlN成异质结构（平面和纳米线）的特性在结构上设计成在短波长红外区域吸收，特别是在1.55微米。关于能带 - 能带特性，我们讨论了内部电场通过自由载流子的筛选的变体中，作为掺杂密度的函数和孔/纳米盘大小。我们观察到，纳米线异质结构始终存在更长的光致发光衰减时间比它们的平面对应物，它支持相关联以在纳米线的几何形状的应变张量的剪切分力的面内压电电场的存在。关于ISB特性，我们报告吸收覆盖1.45-1.75亩使用Ge掺杂量子阱男，与相当的性能的掺杂Si的异质结构的平面。我们还报告中指出掺杂剂的选择不是观察ISB现象的内在障碍Si和掺锗纳米线异质结构类似的ISB吸收。的ISB吸收作为掺杂浓度的函数的由于许多体效应证实，Si和Ge有效地掺杂的GaN / AlN成纳米线异质结构的光谱的移位。

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