• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices
【24h】

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices

机译：纳米线装饰，超薄，单晶硅用于光伏器件

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Reducing silicon ( Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire( NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 +/- 0.2 mu m upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% +/- 5% in photovoltaic conversion efficiency.
机译：减少光伏产业中的硅（Si）晶片厚度始终要求降低整体成本。通过Si厚度减小也可以实现诸如短收集长度和改进的开路电压的进一步的益处。然而，薄膜的问题很差，光吸收差。减少光伏器件中光学损耗的一种方法是最小化前侧反射。这种方法可以应用于前接触的超薄晶体Si太阳能电池以增加光吸收。在这项工作中，使用超薄和柔性的单晶Si晶片制造同性全调太阳能电池。金属辅助化学蚀刻方法用于超薄Si晶片的纳米线（NW）纹理化以补偿弱光吸收。对于厚度为20 +/-0.2μm的超薄Si晶片，观察到在NW纹理中的厚度为20 +/-0.2μm的相对提高。 NW长度和顶部接触优化导致光伏转换效率的相对增强23％+/- 5％。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号