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Metal-to-insulator transition induced by UV illumination in a single SnO2 nanobelt

机译：用紫外线照明在单个SnO2纳米杆上诱导的金属到绝缘体过渡

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An individual tin oxide (SnO2) nanobelt was connected in a back-gate field-effect transistor configuration and the conductivity of the nanobelt was measured at different temperatures from 400 K to 4 K, in darkness and under UV illumination. In darkness, the SnO2 nanobelts showed semiconductor behavior for the whole temperature range measured. However, when subjected to UV illumination the photoinduced carriers were high enough to lead to a metal-to-insulator transition (MIT), near room temperature, at T-MIT = 240 K. By measuring the current versus gate voltage curves, and considering the electrostatic properties of a non-ideal conductor, for the SnO2 nanobelt on top of a gate-oxide substrate, we estimated the capacitance per unit length, the mobility and the density of carriers. In darkness, the density was estimated to be 5-10 x. 10(18) cm(-3), in agreement with our previously reported result (Phys. Status Solid. RRL 6, 262-4 (2012)). However, under UV illumination the density of carriers was estimated to be 0.2-3.8 x. 10(19) cm(-3) near T-MIT, which exceeded the critical Mott density estimated to be 2.8 x 10(19) cm(-3) above 240 K. These results showed that the electrical properties of the SnO2 nanobelts can be drastically modified and easily tuned from semiconducting to metallic states as a function of temperature and light.
机译：在后栅场效应晶体管构造中，单个氧化锡（SnO2）纳米纤维连接在后栅极场效应晶体管配置中，并且在暗度下在400k至4k的不同温度下测量纳米纤维的电导率，并在紫外线照射下。在黑暗中，SnO2纳米核显示为测量的整个温度范围的半导体行为。然而，当受到UV照射时，光诱导载体足够高，以导致金属对绝缘体过渡（MIT），在T-MIT = 240K处接近室温。通过测量电流与栅极电压曲线，并考虑对于栅极氧化物基板顶部的SnO2纳米杆的非理想导体的静电性能，我们估计了每单位长度，迁移率和载体密度的电容。在黑暗中，密度估计为5-10 x。 10（18）厘米（-3），同意我们先前报道的结果（物理稳定状态。RRL 6,262-4（2012））。然而，在紫外线照射下，载体的密度估计为0.2-3.8 x。在T-mit附近的10（19）cm（-3），其超过估计为2.8×10（19）厘米（-3）的临界Mitt密度为240k。这些结果表明，SnO2纳米座的电性能可以随着温度和光的函数，从半导体上进行大幅修改并容易地调谐到金属状态。

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