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首页> 外文期刊>Nanotechnology >Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation
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Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation

机译：具有晶片级多壁封装的高度稳定的2D材料（2DM）场效应晶体管（FET）

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摘要

Field-effect transistors (FETs) composed of 2D materials (2DMs) such as transition-metal dichalcogenide (TMD) materials show unstable electrical characteristics in ambient air due to the high sensitivity of 2DMs to water adsorbates. In this work, in order to demonstrate the long-term retention of electrical characteristics of a TMD FET, a multidyad encapsulation method was applied to a MoS2 FET and thereby its durability was warranted for one month. It was well known that the multidyad encapsulation method was effective to mitigate high sensitivity to ambient air in light-emitting diodes (LEDs) composed of organic materials. However, there was no attempt to check the feasibility of such a multidyad encapsulation method for 2DM FETs. It is timely to investigate the water vapor transmission ratio (WVTR) required for long-term stability of 2DM FETs. The 2DM FETs were fabricated with MoS2 flakes by both an exfoliation method, that is desirable to attain high quality film, and a chemical vapor deposition (CVD) method, that is applicable to fabrication for a large-sized substrate. In order to eliminate other unwanted variables, the MoS2 FETs composed of exfoliated flakes were primarily investigated to assure the effectiveness of the encapsulation method. The encapsulation method uses multiple dyads comprised of a polymer layer by spin coating and an Al2O3 layer deposited by atomic layer deposition (ALD). The proposed method shows wafer-scale uniformity, high transparency, and protective barrier properties against adsorbates (WVTR of 8 x 10(6) g m(2) day(1)) over one month.
机译：由2D材料（2DMS）组成的场效应晶体管（FET），例如过渡金属二甲基化物（TMD）材料，由于2DMS对水吸附的高灵敏度，环境空气中的不稳定电特性。在这项工作中，为了证明TMD FET的电气特性的长期保留，将多键封装方法应用于MOS2 FET，从而保证其耐久性一个月。众所周知，多咖区封装方法可有效地减轻由有机材料组成的发光二极管（LED）中的环境空气的高灵敏度。但是，没有尝试检查2DM FET的多咖啡封装方法的可行性。及时研究长期FET的长期稳定性所需的水蒸气传动比（WVTR）。通过剥离方法用MOS2薄片制造2DM FET，这是一种剥离方法，即获得高质量的膜，以及一种用于大尺寸基板的制造的化学气相沉积（CVD）方法。为了消除其他不需要的变量，主要研究由剥落薄片构成的MOS2 FET以确保封装方法的有效性。封装方法使用由旋涂和由原子层沉积（ALD）沉积的Al 2 O 3层组成的多种二元。该方法显示晶片级均匀性，高透明度和对吸附剂（WVTR为8×10（6）克（2）天（1））的保护阻隔性能超过一个月。

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