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Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate

机译：金属基材支撑的几层拓扑绝缘体的厚度依赖性DIDAC分散器

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摘要

The surface states protected by time-reversal symmetry in 3-dimensional topological insulators have recently been confirmed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy, quantum transport and so on. However, the electronic properties of ultra-thin topological insulator films have not been extensively studied, especially when the films are grown on metal substrates. In this paper, we have elucidated the local behaviors of the electronic states of ultra-thin topological insulator Bi2Se3 grown with molecular beam epitaxy on Au(111) using scanning tunneling microscopy/spectroscopy. We have observed linear dispersion of electron interference patterns at higher energies than the Fermi energy that were not accessible by conventional angle-resolved photoemission spectroscopy. Moreover, the dispersion of the interference patterns varies with the film thickness, which is explained by band bending near the interface between the topological insulator and the metal substrate. Our experiments demonstrate that interfacial effects in thin topological insulator films on metal substrate can be sensed using scanning tunneling spectroscopy.
机译：最近通过角度分辨的光学激光光谱，扫描隧道显微镜，量子传输等，通过三维拓扑绝缘体中受到三维拓扑绝缘体中的时间反转对称保护的表面状态。然而，超薄拓扑绝缘体膜的电子性质尚未被广泛研究，特别是当薄膜在金属基材上生长时。在本文中，我们利用扫描隧道显微镜/光谱法阐明了在Au（111）上使用分子束外延生长的超薄拓扑绝缘体Bi2se3的局部行为。我们已经观察到电子干涉图案在较高的能量下的线性分散，而不是传统角度解析光学激光谱无法访问的费米能量。此外，干涉图案的分散随膜厚度而变化，膜厚度通过拓扑绝缘体和金属基板之间的界面附近的带弯曲来解释。我们的实验表明，可以使用扫描隧道光谱感测到金属基板上的薄拓扑绝缘体膜的界面效应。

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