首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Composition-Dependent Charge Transport in Boron Carbides Alloyed with Aromatics: Plasma Enhanced Chemical Vapor Deposition Aniline/Orthocarborane Films
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Composition-Dependent Charge Transport in Boron Carbides Alloyed with Aromatics: Plasma Enhanced Chemical Vapor Deposition Aniline/Orthocarborane Films

机译:硼碳化物的组成依赖性电荷输送与芳烃合金化:血浆增强的化学气相沉积苯胺/邻摩尔硼烷膜

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Boron carbide films, alloyed with aniline moieties, were deposited by plasma enhanced chemical vapor deposition (PECVD) from aniline and orthocarborane precursors and were found to exhibit composition-dependent drift carrier lifetimes as derived from I(V) and C(V)) measurements. For a film with an aniline/carborane ratio of 5:1, the effective drift carrier lifetimes are similar to 80 mu s at low bias voltage but quickly drop to a few microseconds with increasing bias. A film with a 10:1 aniline/carborane ratio, however, exhibited lifetimes of similar to 6 mu s, or less, at 1 kHz, and much smaller values at 10 kHz. These lifetimes are orders of magnitude longer than those in polyaniline films and comparable to those in PECVD carborane films without aromatic content. X-ray photo-electron spectroscopy (XPS), FTIR, and ellipsometry, combined with density functional theory (DFT)-based cluster calculations, indicate that aniline and orthocarborane moieties are largely intact within the films. Bonding occurs primarily between aniline C sites and carborane B sites, and the aniline coordination number per carborane icosahedron is similar to 2 as the aniline/carborane ratio is increased from 3:1 to 10:1. This aniline/carborane coordination ratio independent of aniline/orthocarborane stoichiometry is consistent with the dependence of charge transport properties on aniline film content at high bias voltage.
机译:碳化硼薄膜,与苯胺部分合金化,通过等离子体沉积增强由苯胺和orthocarborane前体化学气相沉积(PECVD),并且发现表现出组成依赖漂移载流子寿命从I(V)和C(V))测量中导出的。对于具有5:1的苯胺/碳硼烷基比的薄膜,有效漂移载体寿命在低偏置电压下类似于80μm,但随着偏置的增加,迅速降至几微秒。然而,具有10:1的苯胺/碳硼烷比的薄膜表现出类似于6μm的寿命,或者在1kHz,在10kHz下较小。这些寿命比聚苯胺薄膜中的数量级长,并且与没有芳族含量的PECVD碳硼烷膜中的数量级。 X射线光电子 - 电子光谱(XPS),FTIR和椭圆形,结合密度泛函理论(DFT)基础的簇计算,表明苯胺和邻摩尔硼烷部分在很大程度上是在薄膜内完整的。主要发生苯胺C位置和碳硼烷B位点之间的结合,和碳硼烷每二十面体的苯胺配位数为类似于2作为苯胺/碳硼烷比从3增大:1至10:1。该苯胺/碳硼烷与苯胺/邻摩尔硼烷化学计量无关的该苯胺/碳硼烷配位与电荷传输性质对高偏压下的苯胺膜含量的依赖性一致。

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