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Facile fabrication of hierarchical film composed of Co(OH)(2)@Carbon nanotube core/sheath nanocables and its capacitive performance

机译:由CO(OH)(2)@Carbon纳米管芯/护套纳米皮和其电容性能组成的分层膜的容纳制造

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摘要

A hierarchical film composed of Co(OH)(2)@carbon nanotube (CNT) core/sheath nanocables (CCNF) was generated via a simple and rapid electrophoretic deposition method. It is found that the Co(OH)(2) sheath was uniformly anchored on the surface of conductive CNT core. The Co(OH)(2) sheath, with a thickness of similar to 20 nm, was composed of numerous very tiny nanoparticles. Such a unique nanostructure endows the CCNF with a high surface area of 126 m(2) g(-1) and a hierarchical porosity, resulting in a large accessible surface area for redox activity. As expected, the CCNF exhibits high specific capacitance and excellent rate performance. Its specific capacitance reached 1215 F g(-1) under a low current density of 1 A g(-1) and was maintained at 832 F g(-1) when the current density was increased 20 times to 20 A g(-1). A high capacitance retention of 99.3% was achieved after 10000 cycles at 1 A g(-1). Such intriguing capacitive behavior is attributed to the synergistic effect of the CNT core and the Co(OH)(2) sheath.
机译:钴构成的分层膜(OH)(2)@carbon碳纳米管(CNT)芯/鞘纳米电缆(CCNF)中的溶液通过一个简单的和快速的电泳沉积法生成的。据发现的Co(OH)(2)鞘是导电CNT芯的表面上均匀地锚定。所述的Co(OH)(2)鞘,其厚度的类似为20nm,是由许多非常小的纳米颗粒。这样的纳米结构独特赋予与为126μm(2)克(-1)和一个分级的多孔性的高表面积的CCNF,导致氧化还原活性的大的可及表面积。正如所料,表现出CCNF高的比电容和优异的倍率性能。其比电容为1克(-1)的低电流密度下达到1215 F G(-1),保持在832 F G(-1)时的电流密度增加了20倍到20 A G(-1 )。的99.3%的高电容保持在1 A G(-1)10000次循环后获得。这种有趣的电容行为归因于CNT芯和的Co(OH)(2)鞘的协同效应。

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  • 来源
    《RSC Advances》 |2018年第67期|共6页
  • 作者单位

    Zhengzhou Univ Light Ind Sch Mat &

    Chem Engn Zhengzhou 450001 Henan Peoples R China;

    Inst Chem Def Beijing 102205 Peoples R China;

    Zhengzhou Univ Light Ind Sch Mat &

    Chem Engn Zhengzhou 450001 Henan Peoples R China;

    Zhengzhou Univ Light Ind Sch Mat &

    Chem Engn Zhengzhou 450001 Henan Peoples R China;

    Zhengzhou Univ Light Ind Sch Mat &

    Chem Engn Zhengzhou 450001 Henan Peoples R China;

    Zhengzhou Univ Light Ind Sch Mat &

    Chem Engn Zhengzhou 450001 Henan Peoples R China;

    Zhengzhou Univ Light Ind Sch Mat &

    Chem Engn Zhengzhou 450001 Henan Peoples R China;

    Zhengzhou Univ Light Ind Sch Mat &

    Chem Engn Zhengzhou 450001 Henan Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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