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Facile metal-free reduction-based synthesis of pristine and cation-doped conductive mayenite

机译：基于无金属的无金属化合成原始和阳离子掺杂导电型腐蚀性

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摘要

In the present study we synthesized conductive nanoscale [Ca24Al28O64](4+) (4e(-)) (hereafter denoted as C(12)A(7):e(-)) material, and reduced graphene oxide (rGO) was produced, which was unexpected; graphene oxide was removed after melting the sample. The conductivity of C(12)A(7):e(-) composites synthesized at 1550 degrees C was 1.25 S cm(-1), and the electron concentration was 5.5 x 10(19) cm(-3). The estimated BET specific surface area of the highly conductive sample was 20 m(2) g(-1). Pristine C(12)A(7):e(-) electride was obtained by melting the composite powder, but the nano size of C(12)A(7):e(-) particles could not be preserved; the value of conductivity was similar to 28 S cm(-1), electron concentration was similar to 1.9 x 10(21) cm(-3), and mass density was 93%. For C(12)A(7-x)V(x):e(-), where x = 0.25 to 1, the conductivity improved to a maximum value of 40 S cm(-1), and the electron density improved to similar to 2.2 x 10(21) cm(-3); this enhancement in conductivity was also proposed by a theoretical study but lacked any associated experimental support.
机译：在本研究中，我们合成导电纳米级[Ca24Al28O64]（4e（ - ））（以下表示为C（12）A（7）：E（ - ））材料，并制备了还原的氧化石墨烯（RGO） ，这是出乎意料的;熔化样品后除去石墨烯氧化物。在1550℃合成的C（12）A（7）：E（ - ）复合材料的电导率为1.25scm（-1），电子浓度为5.5×10（19）cm（-3）。高导电样品的估计的BET比表面积为20μm（2 )g（-1）。原始C（12）A（7）：通过熔化复合粉末获得E（ - ）电极，但纳米尺寸的C（12）（7）：E（ - ）颗粒不能保留;电导率的值类似于28 s cm（-1），电子浓度类似于1.9×10（21 )cm（-3），质量密度为93％。对于C（12）A（7-x）V（x）：e（ - ），其中x = 0.25至1，电导率改善为40 s cm（-1）的最大值，并且电子密度改善类似于2.2×10（21）厘米（-3）;通过理论研究还提出了这种导电性的这种增强，但缺乏任何相关的实验支持。

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  • 来源
    《RSC Advances》 |2018年第43期|共10页
  • 作者

    Khan Karim; Tareen Ayesha Khan; Elshahat Sayed; Muhammad Naseer; Li Jia; Aboodd Israa; Bibbo Luigi; Yadav Ashish; Sagar Rizwan Ur Rehman; Khan Usman; Ouyang Zhengbiao;

  • 作者单位

    Shenzhen Univ Minist Educ &

    Guangdong Prov Key Lab Optoelect Devices &

    Syst Coll Elect Sci &

    Technol THz Tech Res Ctr Shenzhen 518060 Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol &

    Engn Ningbo 315201 Zhejiang Peoples R China;

    Shenzhen Univ Minist Educ &

    Guangdong Prov Key Lab Optoelect Devices &

    Syst Coll Elect Sci &

    Technol THz Tech Res Ctr Shenzhen 518060 Peoples R China;

    Shenzhen Univ Minist Educ &

    Guangdong Prov Key Lab Optoelect Devices &

    Syst Coll Elect Sci &

    Technol THz Tech Res Ctr Shenzhen 518060 Peoples R China;

    Chinese Acad Sci Ningbo Inst Mat Technol &

    Engn Ningbo 315201 Zhejiang Peoples R China;

    Shenzhen Univ Minist Educ &

    Guangdong Prov Key Lab Optoelect Devices &

    Syst Coll Elect Sci &

    Technol THz Tech Res Ctr Shenzhen 518060 Peoples R China;

    Shenzhen Univ Minist Educ &

    Guangdong Prov Key Lab Optoelect Devices &

    Syst Coll Elect Sci &

    Technol THz Tech Res Ctr Shenzhen 518060 Peoples R China;

    Shenzhen Univ Minist Educ &

    Guangdong Prov Key Lab Optoelect Devices &

    Syst Coll Elect Sci &

    Technol THz Tech Res Ctr Shenzhen 518060 Peoples R China;

    Shenzhen Univ Coll Mat Sci &

    Engn Shenzhen 518060 Peoples R China;

    Tsinghua Univ Tsinghua Berkeley Shenzhen Inst Low Dimens Mat &

    Devices Lab Shenzhen 518055 Peoples R China;

    Shenzhen Univ Minist Educ &

    Guangdong Prov Key Lab Optoelect Devices &

    Syst Coll Elect Sci &

    Technol THz Tech Res Ctr Shenzhen 518060 Peoples R China;

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