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Inorganic molecule (O-2, NO) adsorption on nitrogen- and phosphorus-doped MoS2 monolayer using first principle calculations

机译:使用第一原理计算的无机分子(O-2,NO)对氮气和磷掺杂MOS2单层吸附

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摘要

We performed a systematic study of the adsorption behaviors of O-2 and NO gas molecules on pristine MoS2, N-doped, and P-doped MoS2 monolayers via first principle calculations. Our adsorption energy calculations and charge analysis showed that the interactions between the NO and O-2 molecules and P-MoS2 system are stronger than that of pristine and N-MoS2. The spin of the absorbed molecule couples differently depending on the type of gas molecule adsorbed on the P- and N-substituted MoS2 monolayer. Meanwhile, the adsorption of O-2 molecules leaves N- and P-MoS2 a magnetic semiconductor, whereas the adsorption of an NO molecule turns this system into a nonmagnetic semiconductor, which may provide some helpful information for designing new N- and P-substituted MoS2-based nanoelectronic devices. Therefore, P- and N-MoS2 can be used to distinguish O-2 and NO gases using magnetic properties, and P-MoS2-based gas sensors are predicted to be more sensitive to detect NO molecules rather than pristine and N-MoS2 systems.
机译:我们通过第一原理计算对原始MOS2,N掺杂和P掺杂MOS2单层进行O-2的吸附行为的系统研究。我们的吸附能量计算和电荷分析表明,NO和O-2分子和P-MOS2系统之间的相互作用比原始和N-MOS2更强。吸收分子的旋转根据吸附在P型和N-取代的MOS2单层上的气体分子类型不同。同时,O-2分子的吸附留下了N-和P-MOS2磁半导体,而无分子的吸附将该系统转变为非磁性半导体,这可以提供一些用于设计新的N和P替代的有用信息基于MOS2的纳米电子器件。因此,P-和N-MOS2可用于区分O-2,并且没有使用磁性的气体,并且预测基于P-MOS2的气体传感器以更敏感以检测没有分子而不是原始和N-MOS2系统。

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  • 来源
    《RSC Advances》 |2018年第67期|共11页
  • 作者单位

    Chonbuk Natl Univ Res Inst Phys &

    Chem Dept Nanosci &

    Nanotechnol Jeonju 561756 South Korea;

    Jeonju Univ Inst Applicat Adv Mat Chonju 55069 Chonbuk South Korea;

    Sejong Univ Dept Nano &

    Adv Mat Engn Seoul 143747 South Korea;

    Yeungnam Univ Sch Chem Engn Gyongsan 38541 Gyeongbuk South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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