Electronic transport properties of PbSi Schottky-clamped transistors with a surrounding metal-insulator gate

Zhang Lishu; Li Yifan; Li Tao; Li Hui

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Electronic transport properties of PbSi Schottky-clamped transistors with a surrounding metal-insulator gate

机译：具有周围金属绝缘体门的PBSI肖特基夹紧晶体管的电子传输特性

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Sustaining Moore's law requires the design of new materials and the construction of FET. Herein, we investigated theoretically the electronic transport properties of PbSi nanowire Schottky-clamped transistors with a surrounding metal-insulator gate by employing MD simulations and the NEGF method within the extended Huckel frame. The conductance of PbSi nanowire transistors shows ballistic and symmetrical features because of the Schottky contact and the resonance transmission peak, which is gate-controlled. Interestingly, the PbSi(8,17) nanowire FET shows a high ON/OFF ratio and proves to be a typical Schottky contact between atoms as described by the EDD and EDP metrics.

机译：维持Moore的法律要求设计新材料和FET的建设。在此，通过在延伸的哈哈框架内采用MD模拟和NegF方法，从理论上研究了PBSI纳米线肖特基夹紧晶体管的电子传输特性。 PBSI纳米线晶体管的电导显示出弹性和对称特征，因为肖特基接触和谐振传输峰值，其是栅极控制的。有趣的是，PBSI（8,17）纳米线FET示出了高开/关比，并证明是由EDD和EDP度量描述的原子之间的典型肖特基接触。

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《RSC Advances》 |2018年第3期|共9页
作者
Zhang Lishu; Li Yifan; Li Tao; Li Hui;
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Shandong Univ Minist Educ Key Lab Liquid Solid Struct Evolut &

Proc Mat Jinan 250061 Shandong Peoples R China;

Shandong Univ Minist Educ Key Lab Liquid Solid Struct Evolut &

Proc Mat Jinan 250061 Shandong Peoples R China;

Shandong Univ Minist Educ Key Lab Liquid Solid Struct Evolut &

Proc Mat Jinan 250061 Shandong Peoples R China;

Shandong Univ Minist Educ Key Lab Liquid Solid Struct Evolut &

Proc Mat Jinan 250061 Shandong Peoples R China;

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正文语种 eng
中图分类化学;
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Electronic transport properties of PbSi Schottky-clamped transistors with a surrounding metal-insulator gate

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