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首页> 外文期刊>RSC Advances >Diffusion doping route to plasmonic Si/SiOx nanoparticles
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Diffusion doping route to plasmonic Si/SiOx nanoparticles

机译：扩散掺杂途径到等离子体Si / SiOx纳米粒子

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摘要

Semiconductor nanoparticles (SNPs) are a valuable building block for functional materials. Capabilities for engineering of electronic structure of SNPs can be further improved with development of techniques of doping by diffusion, as post-synthetic introduction of impurities does not affect the nucleation and growth of SNPs. Diffusion of dopants from an external source also potentially allows for temporal control of radial distribution of impurities. In this paper we report on the doping of Si/SiOx SNPs by annealing particles in gaseous phosphorus. The technique can provide efficient incorporation of impurities, controllable with precursor vapor pressure. HRTEM and X-ray diffraction studies confirmed that obtained particles retain their nanocrystallinity. Elemental analysis revealed doping levels up to 10%. Electrical activity of the impurity was confirmed through thermopower measurements and observation of localized surface plasmon resonance in IR spectra. The plasmonic behavior of etched particles and EDX elemental mapping suggest uniform distribution of phosphorus in the crystalline silicon cores. Impurity activation efficiencies up to 34% were achieved, which indicate high electrical activity of thermodynamically soluble phosphorus in oxide-terminated nanosilicon.
机译：半导体纳米颗粒（SNP）是功能材料的有价值的构建块。通过扩散的掺杂​​技术的发展，可以进一步改善SNP的电子结构的工程能力，因为杂质后的合成后引入不影响SNP的成核和生长。掺杂剂来自外部源的扩散也可能允许对杂质的径向分布进行时间控制。在本文中，我们通过在气态磷中退火颗粒报告Si / SiOx Snps的掺杂。该技术可以提供杂质的有效掺入，可控于前体蒸气压。 HRTEM和X射线衍射研究证实得到的颗粒保持其纳米晶体。元素分析显示掺杂水平高达10％。通过热量测量确认杂质的电活性和IR光谱中的局部表面等离子体共振观察。蚀刻颗粒和EDX元素映射的等离子体行为提出了晶体硅芯中磷的均匀分布。实现了高达34％的杂质活化效率，表明在氧化物封端的纳米硅中的热力学溶性磷的高电活性。

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  • 来源
    《RSC Advances》 |2018年第34期|共8页
  • 作者

    Bubenov Sergei S.; Dorofeev Sergey G.; Eliseev Andrei A.; Kononov Nikolay N.; Garshev Alexey V.; Mordvinova Natalia E.; Lebedev Oleg I.;

  • 作者单位

    Lomonosov Moscow State Univ Dept Chem 1-3 Leninskie Gory Moscow 119991 Russia;

    Lomonosov Moscow State Univ Dept Chem 1-3 Leninskie Gory Moscow 119991 Russia;

    Lomonosov Moscow State Univ Dept Chem 1-3 Leninskie Gory Moscow 119991 Russia;

    Russian Acad Sci Prokhorov Gen Phys Inst 38 Vavilov Str Moscow 119991 Russia;

    Lomonosov Moscow State Univ Dept Chem 1-3 Leninskie Gory Moscow 119991 Russia;

    Lomonosov Moscow State Univ Dept Chem 1-3 Leninskie Gory Moscow 119991 Russia;

    ENSICAEN Lab CRISMAT CNRS UMR6508 6 Blvd Marechal Juin F-14050 Caen France;

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  • 正文语种 eng
  • 中图分类 化学;
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