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Modification of graphene oxide film properties using KrF laser irradiation

机译:使用KRF激光辐射改性石墨烯氧化膜性能

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摘要

Modification of various properties of graphene oxide (GO) films on SiO2/Si substrate under KrF laser radiation was extensively studied. X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy and the electrical resistance measurements were employed to correlate the effects of laser irradiation on structural, chemical and electrical properties of GO films under different laser fluences. Raman spectroscopy shows reduced graphene oxide patterns with increased I-2D/I-G ratios in irradiated samples. X-ray photoelectron spectroscopy shows a high ratio of carbon to oxygen atoms in the reduced graphene oxide (rGO) films compared to the pristine GO films. X-ray diffraction patterns display a significant drop in the diffraction peak intensity after laser irradiation. Finally, the electrical resistance of irradiated GO films reduced by about four orders of magnitudes compared to the unirradiated GO films. Simultaneously, reduction and patterning of GO films display promising fabrication technique that can be useful for many graphene-based devices.
机译:广泛地研究了在KRF激光辐射下SiO2 / Si衬底上的石墨烯(GO)膜的各种性质的修饰。采用X射线衍射,X射线光电子能谱,拉曼光谱和电阻测量来关联激光照射对不同激光流量下GO膜的结构,化学和电学性质的影响。拉曼光谱显示辐照样品中具有增加的石墨烯氧化物图案,其具有增加的I-2D / I-G比。与原始GO膜相比,X射线光电子能量显示出在还原氧化物(RGO)膜中的碳对氧原子的高比率。 X射线衍射图案显示激光照射后衍射峰强度的显着下降。最后,与未照射的GO膜相比,辐照孔的电阻减小了大约四个级。同时,GO膜的减少和图案化显示有希望的制造技术,这对于许多基于石墨烯的设备有用。

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  • 来源
    《RSC Advances》 |2018年第23期|共7页
  • 作者单位

    Iran Univ Sci &

    Technol Sch Phys Tehran 16844 Iran;

    Iran Univ Sci &

    Technol Sch Phys Tehran 16844 Iran;

    Univ Delaware Dept Phys &

    Astron Newark DE 19716 USA;

    Univ Delaware Dept Mat Sci &

    Engn Newark DE 19716 USA;

    Univ Delaware Dept Phys &

    Astron Newark DE 19716 USA;

    Univ Delaware Dept Mat Sci &

    Engn Newark DE 19716 USA;

    Univ Delaware Dept Phys &

    Astron Newark DE 19716 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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