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Efficient multi-barrier thin film encapsulation of OLED using alternating Al2O3 and polymer layers

机译：使用交替的Al2O3和聚合物层的OLED有效的多阻隔薄膜封装

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摘要

Organic optoelectronic devices, especially for OLEDs, are extremely susceptibility to water vapor and oxygen which limit their widespread commercialization. In order to extend the shelf-lifetime of devices, thin film encapsulation is the most promising and challenging encapsulation process. In this study, dyad-style multilayer encapsulation structures based on alternating Al2O3 layer and parylene C have been discussed as gas diffusion barriers, in which dense and pinhole-free Al2O3 films were grown by atomic layer deposition (ALD) and flexible parylene C layers were deposited by chemical vapor deposition (CVD). We found the particle in ALD deposited Al2O3 films process is the key killer to barrier property. The thickness of Al2O3 films is the key factor which limit the amount of strain placed on barrier films. With three dyads of the optimal thickness of 30 nm Al2O3 film and 500 nm parylene C, WVTR value is lower than 10(-5) g m(-2) per day. In addition, the lifetime of OLEDs with and without encapsulation was 190 h and 10 h, respectively. All the results show that this TFE structure has the effective encapsulated property and does not cause degradation of the OLED devices.
机译：有机光电器件，特别是OLED，对水蒸气和氧气的极大敏感，这限制了它们广泛的商业化。为了延长装置的寿命，薄膜封装是最有前景和挑战性的封装过程。在本研究中，已经讨论了基于交替的Al2O3层和二甲苯C的Dyad样式多层封装结构作为气体扩散屏障，其中通过原子层沉积（ALD）和柔性二甲烯C层生长致密和无针孔Al2O3薄膜通过化学气相沉积（CVD）沉积。我们发现ALD沉积的AL2O3薄膜工艺中的颗粒是阻隔性的关键杀手。 Al 2 O 3膜的厚度是限制屏障膜上的菌株量的关键因素。对于30nm Al 2 O 3膜的最佳厚度的三种二元，每天WVTR值低于10（-5）Gm（-2）。另外，具有和不封装的OLED的寿命分别为190小时和10小时。所有结果表明，该TFE结构具有有效的封装性能，不会导致OLED器件的劣化。

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  • 来源
    《RSC Advances》 |2018年第11期|共7页
  • 作者

    Wu Jie; Fei Fei; Wei Changting; Chen Xiaolian; Nie Shuhong; Zhang Dongyu; Su Wenming; Cui Zheng;

  • 作者单位

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion 398 Ruoshui Rd Suzhou Ind Pk Suzhou 215123 Jiangsu Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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