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Towards understanding the initial performance improvement of PbS quantum dot solar cells upon short-term air exposure

机译：在短期空气暴露时理解PBS量子点太阳能电池的初始性能改进

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摘要

An initial improvement in performance of PbS quantum dot solar cells composed of one thick layer of PbS quantum dots (QDs) treated with tetrabutylammonium iodide (PbS-TBAI) and one thin layer of PbS QDs capped with 1,2-ethanedithiol (PbS-EDT) over short-term air exposure is widely observed. However, the underlying mechanisms still remain elusive. In the work, we sought to understand the mechanisms as well as their physicochemical origins using a combination of X-ray photoelectron spectroscopy (XPS) and various electronic measurements. It is found that the PbS-TBAI film plays a dominant role in the initial device performance improvement compared with the PbS-EDT film. The PbS-TBAI film is compensation doped upon short-term air exposure (one to three days) owing to the increase of Pb-O and/or Pb-OH species, enabling its energy band to align better with the electron transport layer for more efficient charge extraction. Moreover, it is demonstrated that the short-term air exposure is capable of reducing defects in the devices and improving the diode quality, resulting in an initial increase in device performance. This work contributes to the fundamental understanding of the surface chemistry changes of PbS quantum dots treated by different ligands over air-exposure and the role of surface chemistry of quantum dots in optimizing their photovoltaic performance.
机译：PBS量子点太阳能电池的性能初始改善，该PBS量子点太阳能电池由四丁基碘化铵（PBS-TBAI）处理的PBS量子点（QDS）组成，并用1,2-乙二醇（PBS-EDT）盖上一层PBS QDS（PBS-EDT） ）通过短期空气暴露被广泛观察到。但是，潜在的机制仍然难以难以捉摸。在工作中，我们试图使用X射线光电子能谱（XPS）的组合和各种电子测量来了解机制以及它们的物理化学起源。结果发现，与PBS-EDT膜相比，PBS-TBAI薄膜在初始设备性能改进中起主要作用。的PBS-TBAI膜是在短期暴露于空气由于的Pb-O和/或Pb-OH物种的增加，使得其能带对齐与该电子传输层更好为多个补偿掺杂（一到三天）高效电荷提取。此外，证明短期空气暴露能够减少装置中的缺陷并提高二极管质量，从而导致装置性能的初始增加。这项工作有助于对不同配体对空气暴露处理的PBS量子点的表面化学变化的基本理解，并在空气暴露上的作用和表面化学的作用在优化它们的光伏性能方面。

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  • 来源
    《RSC Advances》 |2018年第27期|共9页
  • 作者

    Gao Wenhui; Zhai Guangmei; Zhang Caifeng; Shao Zhimeng; Zheng Lulu; Zhang Yong; Yang Yongzhen; Li Xuemin; Liu Xuguang; Xu Bingshe;

  • 作者单位

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

    Taiyuan Univ Technol Res Ctr Adv Mat Sci &

    Technol Minist Educ Key Lab Interface Sci &

    Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

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