• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Self-powered, high response and fast response speed metal-insulator-semiconductor structured photodetector based on 2D MoS2
【24h】

Self-powered, high response and fast response speed metal-insulator-semiconductor structured photodetector based on 2D MoS2

机译：基于2D MOS2的自动，高响应和快速响应速度金属 - 绝缘结构光电探测器

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Here, we firstly fabricated a metal-insulator-semiconductor (MIS) (Pd/Al2O3/MoS2) self-powered photodetector based on MoS2, which is sensitive to the illumination of light without any external bias, exhibiting a high responsivity of 308 mA W-1. Under bias, it shows a ratio of photocurrent to dark current exceeding 3705, a high photoresponsivity of 5.04 A W-1, and a fast response/recovery time of 468 ms/543 ms. The optoelectronic performances of the photodetector are closely related to the insulating layer, which can suppress the dark current of the photodetectors, and prevent strong current drifting and degradation by environmental effects, playing a key role in carrier tunneling. Furthermore, we used a thin HfO2 film as the insulating layer to improve the optoelectronics performance of the MIS structured self-powered photodetector, which presented a high responsivity of 538 mA W-1 at 0 bias. With an applied bias, it exhibits an on/off ratio up to 6653, a photoresponsivity of 25.46 A W-1, and a response/recovery time of 7.53 ms/159 ms. Our results lead to a new way for future application of high performance MIS structured photodetectors based on 2D MoS2.
机译：在这里，我们首先基于MOS2制造了金属 - 绝缘体 - 半导体（MIS）（PD / AL2O3 / MOS2）自动光电探测器，其对没有任何外部偏压的光照明敏感，表现出308 mA W的高响应度-1。在偏置下，它表示光电流与暗电流超过3705的比率，高光响应性为5.04A W-1，以及468ms / 543ms的快速响应/恢复时间。光电探测器的光电性能与绝缘层密切相关，绝缘层可以抑制光电探测器的暗电流，并防止通过环境效应的强电流漂移和降解，在载体隧道中发挥着关键作用。此外，我们使用薄的HFO2薄膜作为绝缘层，以改善MIS结构的自动光电探测器的光电子性能，其在0偏压下呈现538mA W-1的高响应度。通过施加的偏置，它表现出高达6653的ON / OFF比率，光响应性为25.46A W-1，以及7.53ms / 159ms的响应/恢复时间。我们的结果导致基于2D MOS2的高性能MIS结构化光电探测器的未来应用新方法。

著录项

  • 来源
    《RSC Advances》 |2018年第49期|共7页
  • 作者

    Liu Xinxin; Li Feng; Xu Minxuan; Qi Junjie;

  • 作者单位

    Univ Sci &

    Technol Beijing Sch Mat Sci &

    Engn State Key Lab Adv Met &

    Mat Beijing 100083 Peoples R China;

    Univ Sci &

    Technol Beijing Sch Mat Sci &

    Engn State Key Lab Adv Met &

    Mat Beijing 100083 Peoples R China;

    Univ Sci &

    Technol Beijing Sch Mat Sci &

    Engn State Key Lab Adv Met &

    Mat Beijing 100083 Peoples R China;

    Univ Sci &

    Technol Beijing Sch Mat Sci &

    Engn State Key Lab Adv Met &

    Mat Beijing 100083 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号