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Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

机译：使用溶液方法方法改进钨掺入ZnSNO薄膜晶体管的长期稳定性

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摘要

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique. The impact ofW doping on the film structure, surface morphology, optical properties and chemical compositions of ZTO thin films is analyzed by atomic force microscopy, X-ray diffraction, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that the WZTO thin films have a smooth surface, amorphous structure and fewer oxygen vacancies with increasing W levels. The oxygen vacancy concentration of WZTO thin films is reduced from 40% to 27% with W incorporation. Compared with films free of W doping, for example ZnSnO TFTs, the positive bias stress stability of WZTO TFTs and long-term stability in air are improved obviously and the shift of the threshold voltage (V-T) is restrained about six times. The critical reason for the improvement of the ZTO TFT properties is attributed to W-doping, wherein the suppression of oxygen vacancies by W ions plays a dominant role in changing the performance of ZTO thin films and the stability of TFTs.
机译：在本文中，通过湿法技术成功制造了W掺杂的ZnSNO（WZTO）薄膜和TFT器件。通过原子力显微镜，X射线衍射，UV可见光谱和X射线光电子谱分析ZTO薄膜的掺杂对薄膜结构，表面形态，光学性质和化学组成的影响。结果表明，WZTO薄膜具有光滑的表面，无定形结构和较少的氧空位，随着W水平的增加。 WZTO薄膜的氧空位浓度从掺入的40％降至27％。与没有W掺杂的薄膜相比，例如ZnSNO TFT，WZTO TFT的正偏压应力稳定性和空气中的长期稳定性显然是提高的，并且阈值电压（V-T）的偏移约为六次。改善ZTO TFT属性的关键原因归因于W掺杂，其中通过W离子的抑制氧空位在改变ZTO薄膜的性能和TFT的稳定性方面起着显着作用。

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  • 来源
    《RSC Advances》 |2018年第37期|共6页
  • 作者

    Yang Xiang; Jiang Shu; Li Jun; Zhang Jian-Hua; Li Xi-Feng;

  • 作者单位

    Shanghai Univ Minist Educ Key Lab Adv Display &

    Syst Applicat Shanghai 200072 Peoples R China;

    Shanghai Univ Minist Educ Key Lab Adv Display &

    Syst Applicat Shanghai 200072 Peoples R China;

    Shanghai Univ Coll Mat Sci &

    Engn Shanghai 200072 Peoples R China;

    Shanghai Univ Minist Educ Key Lab Adv Display &

    Syst Applicat Shanghai 200072 Peoples R China;

    Shanghai Univ Minist Educ Key Lab Adv Display &

    Syst Applicat Shanghai 200072 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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