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A near-infrared photoinverter based on ZnO and quantum-dots

机译：基于ZnO和量子点的近红外光术转换器

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摘要

Near-infrared (NIR) photoswitching transistors have been fabricated using a hybrid structure of zinc oxide (ZnO) and quantum-dots (QDs). The ZnO active layer was prepared using a solution process, while colloidal QDs were inserted between a silicon dioxide (SiO2) gate insulator and a ZnO active layer. The small band gap QDs (1.59 eV) were used to absorb low-energy NIR photons, generate photo-excited carriers, and inject them into the conduction band of the ZnO film. The device with the interfacial QDs induced photocurrents upon exposure to 780 nm-wavelength light. The photoresponsivity of the ZnO/QD device was 0.06 mA W-1, while that of the device without QDs was 1.7 x 10(-5) mA W-1, which indicated that the small band gap QDs enabled a photo-induced current when exposed to NIR light. Furthermore, a photoinverter was prepared which was composed of a ZnO/QDs phototransistor and a load resistor. Photoswitching characteristics indicated that the photoinverter was well modulated by a periodic light signal of 780 nm in wavelength. The results demonstrate a useful way to fabricate NIR optoelectronics based on ZnO and QDs.
机译：使用含氧化锌（ZnO）和量子点（QDS）的混合结构制造了近红外（NIR）光电晶体管。使用溶液方法制备ZnO有源层，而胶体QD被插入二氧化硅（SiO 2）栅极绝缘体和ZnO有源层之间。小带隙QDS（1.59eV）用于吸收低能量NIR光子，产生光激发载体，并将它们注入ZnO膜的导通带中。在暴露于780nm波长光时，具有界面QDS的装置诱导光电流。 ZnO / QD装置的光响应性为0.06 mA W-1，而没有QD的装置的电气量为1.7×10（-5）MA W-1，表明小带隙QD在何时启用照片诱导的电流暴露于尼尔光线。此外，制备了光鼠，其由ZnO / QD光电晶体管和负载电阻组成。 PhotosWitching特性表明光鼠通过780nm的波长的周期性光信号进行良好调节。结果展示了基于ZnO和QDS制造NIR光电子的有用方法。

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  • 来源
    《RSC Advances》 |2018年第41期|共5页
  • 作者

    Kim Byung Jun; Park Sungho; Cha Soon Kyu; Han Il Ki; Kang Seong Jun;

  • 作者单位

    Kyung Hee Univ Dept Adv Mat Engn Informat &

    Elect Yongin 17104 South Korea;

    Kyung Hee Univ Dept Adv Mat Engn Informat &

    Elect Yongin 17104 South Korea;

    Kyung Hee Univ KHU KIST Dept Converging Sci &

    Technol Seoul 02447 South Korea;

    Korea Inst Sci &

    Technol Nanophoton Res Ctr Seoul 02792 South Korea;

    Kyung Hee Univ Dept Adv Mat Engn Informat &

    Elect Yongin 17104 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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