• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >The aggregation of Fe3+ and their d-d radiative transitions in ZnSe:Fe3+ nanobelts by CVD growth
【24h】

The aggregation of Fe3+ and their d-d radiative transitions in ZnSe:Fe3+ nanobelts by CVD growth

机译：CVD生长的Fe3 +和其D-D辐射转变的聚集在ZnSe：Fe3 +纳米中

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Transition metal (TM) doped II-VI semiconductors have attracted great attention due to their luminescence and diluted magnetism. In this study, the Fe3+-doped ZnSe nanobelts (NBs) were grown by a facile CVD method. The surface morphology observed via SEM is smooth and clean and the elemental composition measured via EDS confirms that the Fe3+ ions were incorporated into ZnSe NBs successfully. The microRaman scattering spectra demonstrate that the as-prepared NBs have the zinc blende structure. Furthermore, the Raman spectra of the Fe3+-doped NBs were compared with those of pure and Fe2+ doped reference samples. The former with a higher signal-to-noise ratio, an enhanced 2LO mode, a stronger LO mode redshift and a larger intensity ratio of LO/TO mode as well as the lower acoustic phonon modes confirms the better crystallization and the stronger electron-phonon coupling on Fe3+incorporation. The emission of single Fe3+ ion, assigned to the T-4(1) -> (6)A(1) transition, was observed at about 570 nm. Moreover, increasing the doping concentration of Fe3+ ions caused the formation of different Fe-Fe coupled pairs in the lattice, which emitted light at about 530-555 nm for an antiferromagnetic-coupled pair, possibly due to the stacking faults and at about 620-670 nm for a ferromagnetic-coupled pair.
机译：过渡金属（TM）掺杂II-VI半导体由于其发光和稀释磁性而引起了极大的关注。在该研究中，通过容易CVD方法生长Fe3 + - 掺杂的ZnSe纳米螺纹（NBs）。通过SEM观察到的表面形态是光滑的，清洁，通过EDS测量的元素组成证实Fe3 +离子成功地掺入ZnSe NBS中。微脉散射光谱表明，制备的NBS具有锌融合结构。此外，与纯和Fe2 +掺杂的参考样品进行比较Fe3 +掺杂NB的拉曼光谱。前者具有更高的信噪比，增强的2LO模式，更强的LO模式红移和较大的LO /到模式的强度比以及较低的声学声子模式确认了更好的结晶和更强的电子 - 声子耦合Fe3 + Contoration。在约570nm的情况下观察到分配给T-4（1） - >（6）A（1）转变的单氟3 +离子的发射。此外，增加Fe3 +离子的掺杂浓度导致晶格中的不同Fe-Fe耦合对的形成，该对在约530-555nm处发出光，用于反铁磁耦合对，可能是由于堆叠故障和约620-用于铁磁耦合对的670nm。

著录项

  • 来源
    《RSC Advances》 |2018年第6期|共7页
  • 作者

    Liang B. B.; Hou L. P.; Zou S. Y.; Zhang L.; Guo Y. C.; Liu Y. T.; Farooq M. U.; Shi L. J.; Liu R. B.; Zou B. S.;

  • 作者单位

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Phys Beijing Key Lab Nanophoton &

    Ultrafine Optoelect Beijing 100081 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号