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首页> 外文期刊>RSC Advances >Modified halloysite nanotube filled polyimide composites for film capacitors: high dielectric constant, low dielectric loss and excellent heat resistance
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Modified halloysite nanotube filled polyimide composites for film capacitors: high dielectric constant, low dielectric loss and excellent heat resistance

机译：用于薄膜电容器的改进的Halloysite纳米管填充聚酰亚胺复合材料：高介电常数，低介电损耗和优异的耐热性

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摘要

In this work, halloysite nanotubes (HNTs) were chosen as the fillers and high performance polyimide (PI) as the matrix to form a series of dielectric composite materials with high dielectric constant, low dielectric loss and excellent heat resistance. Firstly, KH550 was used to modify the surface of HNTs to make sure of a good dispersion of HNTs into the polymer. The results showed that the addition of KH550 modified HNTs (K-HNTs) can improve the dielectric constant of the composite films while maintaining their excellent dielectric loss properties. To further increase the dielectric constant of the HNTs/PI composites, conductive polyaniline (PANI) was used to coat the surface of HNTs to obtain PANI modified HNTs (PANI-HNTs). Compared with the K-HNTs filled systems, the dielectric constant of the PANI-HNTs/PI nanocomposite films is greatly enhanced. The highest dielectric constant of the PANI-HNTs/PI films can achieve 17.3 (100 Hz) with a low dielectric loss of 0.2 (100 Hz). More importantly, the as-prepared composite films have high breakdown strengths (>110.4 kV mm(-1)) and low coefficients of thermal expansion, as low as 7 ppm per degrees C, and a maximum discharge energy density of 0.93 J cm(-3). Also, such properties are maintained stably up to 300 degrees C, which is critical for manufacturing heat-resisting film capacitors.
机译：在这项工作中，选择Halloysite纳米管（HNT）作为填料和高性能聚酰亚胺（PI）作为基质，形成一系列具有高介电常数，低介电损耗和优异耐热性的一系列介电复合材料。首先，KH550用于改变HHT的表面，以确保HNT良好分散在聚合物中。结果表明，添加KH550改性的HNT（K-HNT）可以提高复合膜的介电常数，同时保持其优异的介电损耗特性。为了进一步提高HHNT / PI复合材料的介电常数，使用导电聚苯胺（PANI）涂覆HHNT的表面以获得PANI改性的HNT（PANI-HNT）。与填充系统的K-HNT填充系统相比，PANI-HNT / PI纳米复合膜的介电常数大大提高。 PANI-HNT / PI膜的最高介电常数可以实现17.3（100Hz），低介电损耗为0.2（100Hz）。更重要的是，由制备的复合膜具有高击穿强度（> 110.4kVmm（-1））和低热膨胀系数，每度低至7ppm，最大放电能量密度为0.93J厘米（ -3）。而且，这种性质稳定地保持高达300摄氏度，这对于制造耐热膜电容器至关重要。

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  • 来源
    《RSC Advances》 |2018年第19期|共10页
  • 作者

    Zhu Tianwen; Qian Chao; Zheng Weiwen; Bei Runxin; Liu Siwei; Chi Zhenguo; Chen Xudong; Zhang Yi; Xu Jiarui;

  • 作者单位

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

    Sun Yat Sen Univ Guangdong Engn Technol Res Ctr High Performance O State Key Lab Optoelect Mat &

    Technol Sch Chem Polymer Photoelect Funct Films PCFM Lab GD HPPC L Guangzhou 510275 Guangdong Peoples R China;

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