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A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption

机译:基于有机铁电性能低能量消耗的广泛运行突触装置

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摘要

In thiswork, a wide-range operating synaptic device based on organic ferroelectricity has been demonstrated. The device possesses a simple two-terminal structure by using a ferroelectric phase-separated polymer blend as the active layer and gold/indium tin oxide (ITO) as the top/bottom electrodes, and exhibits a distinctive history-dependent resistive switching behavior at room temperature. And the device with low energy consumption (similar to 50 fJ mu m(-2) per synaptic event) can provide a reliable synaptic function of potentiation, depression and the complex memory behavior simulation of differential responses to diverse stimulations. In addition, using simulations, the accuracy of 32 x 32 pixel image recognition is improved from 76.21% to 85.06% in the classical model Cifar-10 with 1024 levels of the device, which is an important step towards the higher performance goal in image recognition based on memristive neuromorphic networks.
机译:在这方面,已经证明了基于有机铁电性的广泛运行突触装置。 该装置通过使用铁电相分离的聚合物共混物作为顶/底电极作为有源层和金/铟锡(ITO)具有简单的双端子结构,并且在房间上表现出独特的历史依赖性电阻切换行为 温度。 并且具有低能量消耗的装置(类似于每个突触事件的50fJ mu m(-2))可以提供具有不同刺激的差分响应的可靠突触函数,以及对不同刺激的差异响应。 此外,使用模拟,32×32像素图像识别的精度从76.21%到85.06%的古典模型-10,具有1024个级别的设备,这是迈向图像识别的更高性能目标的重要一步 基于椎间型神经形态网络。

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  • 来源
    《RSC Advances》 |2018年第47期|共5页
  • 作者单位

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

    Royal Inst Technol Sch Technol &

    Hlth SE-10044 Stockholm Sweden;

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

    Nanjing Tech Univ Key Lab Flexible Elect Nanjing 211800 Jiangsu Peoples R China;

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

    Fudan Univ SIST State Key Lab ASIC &

    Syst Shanghai 200433 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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