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首页> 外文期刊>RSC Advances >Synergies of co-doping in ultra-thin hematite photoanodes for solar water oxidation: In and Ti as representative case
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Synergies of co-doping in ultra-thin hematite photoanodes for solar water oxidation: In and Ti as representative case

机译：用于太阳能水氧化的超薄赤铁矿光电池中共掺杂的协同作用：IN和TI作为代表性案例

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Solar energy induced water splitting in photoelectrochemical (PEC) cells is one of the most sustainable ways of hydrogen production. The challenge is to develop corrosion resistant and chemically stable semiconductors that absorb sunlight in the visible region and, at the same time, have the band edges matching with the redox level of water. In this work, hematite (alpha-Fe2O3) thin films were prepared onto an indium-doped tin oxide (ITO; In:SnO2) substrate by e-beam evaporation of Fe, followed by air annealing at two different temperatures: 350 and 500 degrees C. The samples annealed at 500 degrees C show anin situdiffusion of indium from the ITO substrate to the surface of alpha-Fe2O3, where it acts as a dopant and enhances the photoelectrochemical properties of hematite. Structural, optical, chemical and photoelectrochemical analysis reveal that the diffusion of In at 500 degrees C enhances the optical absorption, increases the electrode-electrolyte contact area by changing the surface topology, improves the carrier concentration and shifts the flat band potential in the cathodic direction. Further enhancement in photocurrent density was observed byex situdiffusion of Ti, deposited in the form of nanodisks, from the top surface to the bulk. Thein situIn diffused alpha-Fe(2)O(3)photoanode exhibits an improved photoelectrochemical performance, with a photocurrent density of 145 mu A cm(-2)at 1.23 V-RHE, compared to 37 mu A cm(-2)for the photoanode prepared at 350 degrees C; it also decreases the photocurrent onset potential from 1.13 V to 1.09 V. However, the In/Ti co-doped sample exhibits an even higher photocurrent density of 290 mu A cm(-2)at 1.23 V(RHE)and the photocurrent onset potential decreases to 0.93 V-RHE, which is attributed to the additional doping and to the surface becoming more favorable to charge separation.
机译：光电化学（PEC）细胞中的太阳能诱导水分裂是最可持续的氢气生产方式之一。挑战是开发耐腐蚀性和化学稳定的半导体，在可见区域中吸收阳光，同时具有与水的氧化还原水平匹配的带状边缘。在这项工作中，通过E-束蒸发将赤铁矿（α-Fe2O3）薄膜制成Fe的掺杂型氧化锡（ITO; ITO; SNO2）底物，然后在两个不同温度下的空气退火：350和500度C.在500℃下退火的样品显示从ITO底物到α-Fe2O3的表面的铟的inain satufiffusion，其中它用作掺杂剂并增强赤铁矿的光电化学性质。结构，光学，化学和光电化学分析表明，在500摄氏度中的扩散增强光学吸收，通过改变表面拓扑来增加电极电解质接触面积，从而提高载流子浓度并将扁平带电位置换在阴极方向上。观察到光电流密度的进一步增强Ti的Byex Satuffiffumet，以纳米小管形式沉积，从顶部表面到体积。 Thein situin扩散α-Fe（2）O（3）PhotoNode表现出改善的光电化学性能，光电流密度为1.23V-rh-rhe的145μm（-2），而37 mu a cm（-2）相比PhotoNode在350℃下准备;它还降低了1.13 V至1.09V的光电流发作电位。然而，In / Ti共掺杂样品在1.23V（RHE）和光电流发作潜力下表现出甚至更高的光电流密度为290μm（-2）和光电流发作潜力减少至0.93V-rhe，其归因于额外的掺杂和表面变得更加有利地电荷分离。

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  • 来源
    《RSC Advances》 |2020年第55期|共10页
  • 作者

    Singh Aadesh P.; Tossi Camilla; Tittonen Ilkka; Hellman Anders; Wickman Bjorn;

  • 作者单位

    Chalmers Univ Technol Dept Phys Div Chem Phys SE-41296 Gothenburg Sweden;

    Aalto Univ Sch Elect Engn Dept Elect &

    Nanoengn POB 13500 Aalto 00076 Finland;

    Aalto Univ Sch Elect Engn Dept Elect &

    Nanoengn POB 13500 Aalto 00076 Finland;

    Chalmers Univ Technol Dept Phys Div Chem Phys SE-41296 Gothenburg Sweden;

    Chalmers Univ Technol Dept Phys Div Chem Phys SE-41296 Gothenburg Sweden;

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