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首页> 外文期刊>RSC Advances >Sandwich-structured poly(vinylidene fluoride-hexafluoropropylene) composite film containing a boron nitride nanosheet interlayer
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Sandwich-structured poly(vinylidene fluoride-hexafluoropropylene) composite film containing a boron nitride nanosheet interlayer

机译：夹层结构聚（偏二氟乙烯 - 六氟丙烯）复合膜，含有氮化硼纳米晶片中间层

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摘要

High performance dielectric polymer materials are a key point for energy storage capacitors, especially film capacitors. In this paper, a sandwich-structured polymer film is constructed to achieve high energy density and high efficiency. High dielectric materials of poly(vinylidene fluoride-hexafluoropropylene) (P(VDF-HFP)) doped with barium titanate (BaTiO3) are used as the outer layer to achieve a high dielectric constant, and a boron nitride nanosheet (BNNS) layer is inserted between P(VDF-HFP)/BaTiO3 to obtain a high breakdown field strength of composite films. The results indicate that when the doping amount of the BaTiO3 nanoparticles reaches 10 wt% and the mass fraction of the BNNS layer is 0.75 wt%, a significant improvement of energy storage performance is obtained. The energy storage density of the P(VDF-HFP)/BaTiO3/BNNSs composite film can reach 8.37 J cm(-3), which is higher than 6.65 J cm(-3) of the pure P(VDF-HFP) film. Compared with the P(VDF-HFP) film doped with BaTiO3, significant improvement of the breakdown field strength (about 148.5%) is achieved and the energy storage density increases 235% accordingly, resulting from the inserted BNNSs layer blocking the growth of electrical branches and suppressing leakage current. This novel sandwich-structured film shows promising future applications for high performance dielectric capacitors.
机译：高性能介电聚合物材料是能量存储电容器，尤其是薄膜电容器的关键点。在本文中，构造夹层结构的聚合物膜以实现高能量密度和高效率。用掺杂有钛酸钡（BATIO3）的聚（偏二氟乙烯 - 六氟丙烯）（P（VDF-HFP））的高介电材料用作外层以实现高介电常数，并插入氮化硼纳米晶片（BNNS）层在P（VDF-HFP）/ BATIO3之间获得复合膜的高击穿场强度。结果表明，当BATIO3纳米颗粒的掺杂量达到10wt％并且BNNS层的质量分数为0.75wt％时，获得了能量存储性能的显着提高。 P（VDF-HFP）/ BATIO3 / BNNSS复合膜的能量存储密度可达到8.37J厘米（-3），其高于纯P（VDF-HFP）膜的6.65J厘米（-3）。与BATIO3掺杂的P（VDF-HFP）膜相比，实现了击穿场强度（约148.5％）的显着改善，并且通过插入的BNNS层阻断电气分支的生长而产生的能量存储密度增加235％并抑制漏电流。这种新型夹层结构薄膜显示了高性能介电电容的未来应用。

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  • 来源
    《RSC Advances》 |2020年第4期|共8页
  • 作者

    Chen Fujia; Zhou Yujiu; Guo Jimin; Sun Song; Zhao Yuetao; Yang Yajie; Xu Jianhua;

  • 作者单位

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Peoples R China;

    Jiangsu Univ Sci &

    Technol Sch Elect &

    Informat Zhenjiang 212003 Jiangsu Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Peoples R China;

    Univ Elect Sci &

    Technol China Sch Optoelect Sci &

    Engn State Key Lab Elect Thin Films &

    Integrated Devic Chengdu 610054 Peoples R China;

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