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首页> 外文期刊>RSC Advances >ZnO decorated Sn3O4 nanosheet nano-heterostructure: a stable photocatalyst for water splitting and dye degradation under natural sunlight
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ZnO decorated Sn3O4 nanosheet nano-heterostructure: a stable photocatalyst for water splitting and dye degradation under natural sunlight

机译：ZnO装饰SN3O4纳米片纳米异质结构：一种稳定的光催化剂，用于自然阳光下的水分裂和染料降解

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摘要

Herein, a facile hydrothermally-assisted sonochemical approach for the synthesis of a ZnO decorated Sn3O4 nano-heterostructure is reported. The phase purity of the nano-heterostructure was confirmed by X-ray diffraction and Raman spectroscopy. The morphological analysis demonstrated a nanosheet-like structure of Sn3O4 with a thickness of 20 nm, decorated with ZnO. The optical band gap was found to be 2.60 eV for the ZnO@Sn3O4 nano-heterostructure. Photoluminescence studies revealed the suppression of electron-hole recombination in the ZnO@Sn3O4 nano-heterostructure. The potential efficiency of ZnO@Sn3O4 was further evaluated towards photocatalytic hydrogen production via H2O splitting and degradation of methylene blue (MB) dye. Interestingly, it showed significantly superior photocatalytic activity compared to ZnO and Sn3O4. The complete degradation of MB dye solution was achieved within 40 min. The nano-heterostructure also exhibited enhanced photocatalytic activity towards hydrogen evolution (98.2 mol h(-1)/0.1 g) via water splitting under natural sunlight. The superior photocatalytic activity of ZnO@Sn3O4 was attributed to vacancy defects created due to its nano-heterostructure.
机译：这里，报道了一种用于合成ZnO装饰的SN3O4纳米异质结构的体育热疗法的辅酶化学方法。通过X射线衍射和拉曼光谱证实纳米异质结构的相纯度。形态学分析证明了SN3O4的纳米片状结构，厚度为20nm，用ZnO装饰。发现光带隙是ZnO @ Sn3O4纳米异质结构的2.60eV。光致发光研究表明，ZnO @ SN3O4纳米异质结构中的电子空穴重组抑制。通过H2O分裂和亚甲基蓝（MB）染料的降解，进一步评估ZnO @ Sn3O4的潜在效率朝向光催化氢气产生。有趣的是，与ZnO和SN3O4相比，它表现出显着优异的光催化活性。在40分钟内实现MB染料溶液的完全降解。纳米异质结构还通过自然阳光下的水分裂表现出升高的光催化活性（98.2mol H（-1）/ 0.1g）。 ZnO @ Sn3O4的卓越光催化活性归因于由于其纳米异质结构而产生的空位缺陷。

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  • 来源
    《RSC Advances》 |2019年第18期|共8页
  • 作者

    Balgude Sagar D.; Sethi Yogesh A.; Kale Bharat B.; Amalnerkar Dinesh P.; Adhyapak Parag V.;

  • 作者单位

    Ctr Mat Elect Technol Pashan Rd Pune 411008 Maharashtra India;

    Ctr Mat Elect Technol Pashan Rd Pune 411008 Maharashtra India;

    Ctr Mat Elect Technol Pashan Rd Pune 411008 Maharashtra India;

    Hanyang Univ Inst Nano Sci &

    Technol Seoul 04763 South Korea;

    Ctr Mat Elect Technol Pashan Rd Pune 411008 Maharashtra India;

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  • 正文语种 eng
  • 中图分类 化学;
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