首页> 外文期刊>RSC Advances >Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
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Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices

机译:GE金属氧化物半导体器件上原子层沉积的ALN缓冲层的高k栅极堆叠的Geox界面层的抑制及高k栅极堆的电性能

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摘要

For high-performance nanoscale Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx), which is thermodynamically unstable and easily desorbed. In this study, an atomic-layer-deposited AlN buffer layer was introduced between the crystalline ZrO2 high-K gate dielectrics and epitaxial Ge, in order to reduce the formation of interfacial GeOx. The results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy demonstrate that the AlN buffer layer suppressed the formation of interfacial GeOx. Hence, significant enhancement of the electrical characteristics of Ge metal-oxide-semiconductor (MOS) capacitors was achieved with a two-orders-of-magnitude reduction in the gate leakage current, a 34% enhancement of the MOS capacitance, and a lower interfacial state density. The results indicate that the AlN buffer layer is effective in providing a high-quality interface to improve the electrical performance of advanced Ge MOS devices.
机译:对于高性能纳米级GE基晶体管,一个重要的焦点是互相锗氧化锗(Geox),其热力学上不稳定并且容易被解吸。在该研究中,在结晶ZrO2高k栅极电介质和外延Ge之间引入原子层沉积的AlN缓冲层,以减少界面Geox的形成。 X射线光电子能谱和高分辨率透射电子显微镜的结果表明ALN缓冲层抑制了界面凝血的形成。因此,葛金属氧化物半导体的电特性显著增强(MOS)电容器用两订单的数量级的减少在栅极漏电流时,MOS电容34%的增强一个,和一个较低的界面实现状态密度。结果表明,ALN缓冲层有效地提供高质量的界面以改善先进的GE MOS装置的电气性能。

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  • 来源
    《RSC Advances》 |2019年第2期|共7页
  • 作者单位

    Natl Taiwan Univ Dept Mat Sci &

    Engn Taipei Taiwan;

    Natl Taiwan Univ Dept Mat Sci &

    Engn Taipei Taiwan;

    Natl Taiwan Univ Dept Mat Sci &

    Engn Taipei Taiwan;

    Natl Taiwan Univ Dept Mat Sci &

    Engn Taipei Taiwan;

    Acad Sinica Res Ctr Appl Sci Taipei Taiwan;

    Natl Taiwan Univ Dept Mat Sci &

    Engn Taipei Taiwan;

    Natl Taiwan Univ Dept Mat Sci &

    Engn Taipei Taiwan;

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  • 正文语种 eng
  • 中图分类 化学;
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