Morphology controlling of  111 -3C-SiC films by HMDS flow rate in LCVD

Xu Qingfang; Tu Rong; Sun Qingyun; Yang Meijun; Li Qizhong; Zhang Song; Zhang Lianmeng; Goto Takashi; Ohmori Hitoshi; Shi Ji; Li Haiwen; Kosinova Marina; Bikramjit Basu

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Morphology controlling of 111 -3C-SiC films by HMDS flow rate in LCVD

机译：形态控制＆ 111＆ -3C-SIC薄膜通过LCVD的HMDS流速

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Morphology of 111 -oriented 3C-SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of 250 nm and an aspect ratio in the range of 5 to 10, with a density of 1.3 x 10(8) mm(-2). The influence mechanism of f on the surface morphology, as well as the growth mechanism of SiC whiskers, was discussed.

机译：＆的形态学 111＆ - 在激光化学气相沉积（LCVD）中，从马赛克转化到花椰菜以晶须转变为粉末状晶壶，以六甲基二硅烷（HMDS）的增加流速（F）。 SiC晶须是天然锋利的六方嘧酰胺，平均高度为250nm，宽高比为5至10，密度为1.3×10（8）mm（-2）。讨论了F对表面形态的影响机制，以及SIC晶须的生长机制。

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来源
《RSC Advances》 |2019年第5期|共5页
作者
Xu Qingfang; Tu Rong; Sun Qingyun; Yang Meijun; Li Qizhong; Zhang Song; Zhang Lianmeng; Goto Takashi; Ohmori Hitoshi; Shi Ji; Li Haiwen; Kosinova Marina; Bikramjit Basu;
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Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol Hubei Key Lab Adv Technol Automot Components Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Inst Phys &

Chem Res 2-1 Hirosawa Wako Saitama 3510198 Japan;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

Proc 122 Luoshi Rd Wuhan 430070 Peoples R China;

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正文语种 eng
中图分类化学;
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1. Morphology controlling of 111 -3C-SiC films by HMDS flow rate in LCVD [J] . Xu Qingfang, Tu Rong, Sun Qingyun, RSC Advances . 2019,第5期

机译：形态控制＆ 111＆ -3C-SIC薄膜通过LCVD的HMDS流速
2. The sputtering of A1N films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures [J] . A. Iqbal, G. Walker, L. Hold, Journal of materials science . 2018,第3期

机译：在各种衬底温度下在轴上和轴外3C-SiC（111）/ Si（111）衬底上溅射AlN膜
3. Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate [J] . Takeru Suto, Junya Yaita, Takayuki Iwasaki, Applied Physics Letters . 2017,第6期

机译：通过在3C-SiC / Si（111）衬底上通过脉冲偏置增强形核和外延晶粒选择合成的高取向金刚石（111）膜
4. Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates [C] . M. Portail, M. Nemoz, M. Zielinski, Silicon Carbide and Related Materials 2007 . 2009

机译：在（111），（211）和（100）硅衬底上生长的3C-SiC膜的结构和形态表征
5. Growth and characterization of epitaxial 3C-SiC films on silicon for electronic applications. [D] . Jacob, Chacko. 1997

机译：电子应用硅上外延3C-SiC薄膜的生长和表征。
6. RF Sputtering Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates [O] . Visakh Valliyil Sasi, Abid Iqbal, Kien Chaik, 2017

机译：在3C-SiC（111）/ Si（111）基板上进行ZnO（002）薄膜的RF溅射退火后处理和表征
7. Morphology controlling of 〈111〉-3C–SiC films by HMDS flow rate in LCVD [O] . Qingfang Xu, Rong Tu, Qingyun Sun, 2019

机译：LCVD中HMDS流速的<111> -3C-SiC膜的形态控制
8. Morphology and microstructure of (111) crystalline CeO(sub 2) films grown on amorphous SiO(sub 2) substrates by pulsed-laser ablation [R] . Zhu, S. , Lowndes, D. H. , Budai, J. D. , 1994

机译：通过脉冲激光烧蚀在无定形siO（sub 2）衬底上生长的（111）晶体CeO（sub 2）薄膜的形态和微观结构

Morphology controlling of 111 -3C-SiC films by HMDS flow rate in LCVD

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