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Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties

机译：三元氧化氮Zn2GeO4纳米线网络的合成及其深紫紫外检测特性

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摘要

Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290-400 nm) and only responsive to the UV-C band (200-290 nm). Here, we report on the synthesis of Zn2GeO4 nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn2GeO4 NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn2GeO4 NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times (t(rise) approximate to 0.17 s and t(decay) approximate to 0.14 s).
机译：三元氧化物Zn2GeO4具有4.84eV的宽带隙，作为第四代半导体的候选者，对深紫外（DUV）光电探测器应用引起了大量的关注，因为预期对UV-A / B频段盲目 （290-400 nm）并且仅响应UV-C频段（200-290 nm）。 这里，我们通过较低压力化学气相沉积报告Zn2GeO4纳米线（NW）网络的合成，并研究其对应的DUV检测特性。 我们发现纯Zn2GeO4 NWS可以在1 KPA的生长压力下获得。 DUV检测测试表明，生长压力对DUV检测性能产生显着影响。 1 KPA下产生的Zn2GeO4 NW网络显示出具有快速上升和衰减时间（T（上升）近似为0.17 s和t（衰减）近似为0.14 s的太阳能盲光学偏移性。

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  • 来源
    《RSC Advances》 |2019年第3期|共9页
  • 作者

    Han Xu; Feng Shuanglong; Zhao Yiming; Li Lei; Zhan Zhaoyao; Tao Zhiyong; Fan Yaxian; Lu Wenqiang; Zuo Wenbin; Fu Dejun;

  • 作者单位

    Harbin Engn Univ Minist Educ China Key Lab InFiber Integrated Opt Sch Phys Harbin 150001 Heilongjiang Peoples R China;

    Chinese Acad Sci Chongqing Key Lab Multiscale Mfg Technol Chongqing Inst Green &

    Intelligent Technol Chongqing 400714 Peoples R China;

    Harbin Engn Univ Minist Educ China Key Lab InFiber Integrated Opt Sch Phys Harbin 150001 Heilongjiang Peoples R China;

    Chinese Acad Sci Chongqing Key Lab Multiscale Mfg Technol Chongqing Inst Green &

    Intelligent Technol Chongqing 400714 Peoples R China;

    Chinese Acad Sci Chongqing Key Lab Multiscale Mfg Technol Chongqing Inst Green &

    Intelligent Technol Chongqing 400714 Peoples R China;

    Harbin Engn Univ Minist Educ China Key Lab InFiber Integrated Opt Sch Phys Harbin 150001 Heilongjiang Peoples R China;

    Harbin Engn Univ Minist Educ China Key Lab InFiber Integrated Opt Sch Phys Harbin 150001 Heilongjiang Peoples R China;

    Harbin Engn Univ Minist Educ China Key Lab InFiber Integrated Opt Sch Phys Harbin 150001 Heilongjiang Peoples R China;

    Wuhan Univ Sch Phys &

    Technol Minist Educ Key Lab Artificial Micro &

    Nanomat Wuhan 430072 Peoples R China;

    Wuhan Univ Sch Phys &

    Technol Minist Educ Key Lab Artificial Micro &

    Nanomat Wuhan 430072 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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